Exploiting Practical-Considering Techniques in MOSFET Circuit Simulations Based on Selective-Tracing Waveform Relaxation Algorithm

應用實際考量技巧於基於STWR演算法的MOSFET電路模擬

陳俊榮(C. J. Chen) ； 蔡昌隆(C. L. Tsai) ； 孫振泉(J. D. Sun) ； 李志仁(C. J. Lee) ； 張耀鴻(Allen Y. Chang) ； 周立平(L. P. Chou) ； 楊泰寧(T. N. Yang)

《華岡工程學報》 28期 (2011/06) Pp. 49-56

https://doi.org/10.29987/CCUHKJE.201106.0008

摘要

此論文所謂實際考量技巧為考慮電路模擬器使用者的習慣，然後利用之以加強電路模擬效率的技巧，漸增模擬屬於實際考量技巧之一，此篇論文提出了稱做IPC的新的漸增模擬技術，而將之建構於STWR演算法中，也提出了ISE模擬環境搭配漸增模擬以發揮較高的模擬效率；另一種實際考量技巧為需求模擬（SOD），也將之實際建構於ISE中。所有提出的方法均實際製做了，也執行了實際的電路模擬以測試之，模擬的結果驗證了所提方法的優秀效果。

關鍵字

漸增線路模擬 ； 基於鬆弛 ； WR演算法

並列摘要

Practical-considering techniques are special method to enhance the simulation speed. They utilize customs of engineers (or software using circuit simulations). Incremental simulation is one of practical-considering techniques. This paper proposes a new incremental simulation algorithm called Incremental-pseudo Circuit Method (IPC-method), which is constructed in Selective-tracing Waveform Relaxation (STWR) algorithm. The Interactive Simulation Environment (ISE) has been proposed to cooperate with the incremental simulation for efficiency considerations. Another practical-considering technique is called simulation-on-demand (SOD), which is also proposed in this paper. Real experiments on the implemented program justify the effectiveness of proposed methods.

並列關鍵字

incremental circuit simulation ； relaxation-based ； WR algorithm