有機金屬氣相沈積生長氮化銦鎵／氮化鎵量子井之應變操控及其應用

Strain Manipulation in Growing InGaN/GaN Quantum Wells with Metalorganic Chemical Vapor Phase Deposition and Its Applications

黃吉豐(Chi-Feng Huang)

《光學工程》 105期 (2009/04) Pp. 24-30

https://doi.org/10.30011/OE.200904.0004

摘要

本文中，我們介紹預施應力之化學氣相沈積技術並描述其應用。預施應力生長法可有效地提高氮化鎵／氮化銦鎵量子井主動發光層中的銦濃度，而延伸主動層的發光波長。其生長方式為預先生長－低濃度量子井層於底部，接著在相同的生長條件下，可把原先於綠光波段的主動發光層紅移至橘光波段。從陰極射線螢光頻譜顯示，靠近抵濃度量子井的主動量子井層，由於受到低濃度量子井較強的應力效應，致使產生較高的銦濃度而發出橘光，反之，於其上遠離低濃度層的量子井則受到較小的作用。從X光繞射量測、穿遂式電子顯微鏡和應力分析軟體等實驗結果也驗證了利用預施應力技術生長的樣品，其不同深度的量子井有不同的銦含量，越靠近低濃度量子井層的量子井有較高的銦濃度。我們利用此生長技術把原本發綠光的磊晶樣品拉長了80 nm的波長，而製作出橘光發光二極體。再者，我們也利用此技術在不需使用螢光粉下，製作白光發光二極體，其電激螢光頻譜可接近理想白光的色座標位置(1/3, 1/3)。

關鍵字

氮化鎵 ； 氮化銦鎵 ； 預施應力 ； 白光二極體

並列摘要

In this paper, we introduce the pre strained growth technique of metal organic chemical vapor deposition and its applications. Indium incorporation in InGaN/GaN multiple quantum wells (QWs) can be effectively enhanced based on the prestrained growth technique. The growth technique means the spectral red-shift of the QWs designated for green emission into the orange range in a light-emitting diode (LED) by adding a low-indium QW at the bottom. The cathodo-luminescence spectra indicate that the long-wavelength QWs close to the low-indium one are strongly influenced by this added QW and mainly emit orange photons. Those near the top are less affected. The techniques of X-ray diffraction (XRD), transmission electron microscopy (TEM), and strain state analysis (SSA) are used to calibrate indium average contents among the high-indium InGaN/GaN QWs. The results confirm that the high-indium QW closest to the low-indium one has the highest indium content. With the pre-strained growth, orange LEDs are fabricated for elongating the emission wavelength by more than 80 nm. Also, we grow a phosphor-free white-light InGaN/GaN QW LED epitaxial structure with its electroluminescence (EL) spectrum close to the ideal condition in Commission International de l'Eclairage chromaticity based on the presrained growth technique.

並列關鍵字

GaN ； InGaN ； Prestrained Growth ； White Light Light-Emitting Diode