- 學位論文
金屬和基板對鍺量子點金氧半結構的發光特性之影響
The Luminescent Characteristic of Metal-Oxide-Semiconductor with different metal and Substrate
摘要
矽鍺光電元件具有與矽積體化電路整合的優點，這是因為矽鍺光電元件具有1.3至1.55 um 的波長，它可以提升光纖通訊應用的重要性。隨著各種元件的製程已經相當成熟，如在矽鍺發光元件、調變器和光偵測器等元件製程，這些都將有助於矽光電元件和光電積體電路的研究與發展。 本論文中我們製做一個基本的金屬-氧化物-半導體結構的發光元件及具有鍺量子點於氧化層的金屬-氧化層-半導體結構的發光元件，我們可以藉由鍺量子點的發光強度來判別數位信號中的0或1，因此具有鍺量子點之金屬-氧化物-半導體結構的元件可應用於電荷儲存的記憶體，因此它可以應用於光電積體電路上。 我們採用P-type normal doping 、N-type normal doping 、N-type high doping 的基板，接著再去改變正面的金屬，而我們採用的金屬有Al、g和Au三種不同的金屬，最後在改變Tunnel Oxide的種類，之後再來探討這些元件的發光特性，並且從能帶圖的觀點來解釋這些元件不同的發光效應，最後再從這些元件的電壓、電流和功率來看其發光的效率，進ㄧ步去做比較。最後可得到哪些元件適合利用在哪些用途上。
並列摘要
The main advantages of silicon germanium electro- optical devices are the highly compatibility with process of silicon integrated circuits. The radiation and absorption wavelength of Si-Ge devices fall about 1.3 um to 1.55 um and it is important for application in optical fiber communication. The process technologies of devices are now matured, such as Si-Ge light emission device, modulator and photodetector, and these are helpful to the development of silicon electro- optical devices and electro-optical integrated circuits. In the thesis, a basic metal-oxide-semiconductor structure light emission device and a metal-oxide-semiconductor structure light emission device with Ge quantum dots in oxide layer were fabricated. The emission strength of Ge quantum dots were distinguished as digital signal in 0 or 1, so that this device could be applied in electro-optical integrated circuits as memories storing charges. P-type normal doping, n-type normal doping and n-type high doping substrates were used and the deposited metals were Al, Ag and Au. Then the tunneling oxide was also changed and the light emission characteristics of these devices were discussed. The band diagram was used to explain the effect. The voltage, current and power was viewed to determine efficiency.
參考文獻
延伸閱讀
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