本篇論文討論一個有浮動基體效應(Floating-Body-Effect)的部份解離絕緣體上矽N型金氧半元件(PD-SOI),透過雙載子電晶體(BJT) / 金氧半元件(MOS)方式去建立SPICE的模型。先在第一章簡介絕緣體上矽金氧半元件(SOI MOS Device)及其元件特性。然後在第二章描述電流傳導機制和部份解離絕緣體上矽N型金氧半元件(PD-SOI MOS Device),且使用雙載子電晶體(BJT) / 金氧半元件(MOS)的方式去建立SPICE的電流模型。第三章藉由量測的資料與模擬的結果,可以驗證使用雙載子電晶體(BJT) / 金氧半元件(MOS)的架構,對有無改良寄生雙載子電晶體電流回饋(K')到絕緣體上矽金氧半元件(SOI)中高電場區域、和高電場區域有多少電流回饋(K)到下面的寄生雙載子電晶體的準確性。而模擬出來的結果可以得出有寄生雙載子電晶體電流回饋(K'=0.99),在Gate Voltage小時,有足夠的固撞擊游離(impact ionization)電流來影響崩潰電壓。第四章為總結和未來工作。
This thesis reports modeling the floating-body-effect-related breakdown and the kink behavior of 40nm PD SOI NMOS device via the SPICE BJT/MOS model approach。First, in Chapter 1 introduction of PD SOI NMOS device is introduced。Then in Chapter 2 the current conduction mechanism of the PD-SOI NMOS device is described, followed by the SPICE BJT/MOS models。In Chapter 3, effectiveness of the BJT/MOS models approach is evaluated for nanometer PD-SOI NMOS devices via SPICE simulation result. As verified by the experimentally measured data and the 2D simulation results, this compact SOI model provides an accurate prediction. Chapter 4 is conclusion and future work。