30-60-GHz CMOS壓控振盪器之設計及實現

Design and Implementation of 30-60-GHz CMOS Voltage-Controlled Oscillators

張添鴻(Tien-Hung Chang)

指導教授 ： 林佑昇

國立暨南國際大學/科技學院/電機工程學系/碩士(2008年)

https://doi.org/10.6837/NCNU.2008.00171

摘要

本論文主要以CMOS製程去實現高頻振盪器，研究主題分成三個部分：
第一部份為Ku頻段電流共用架構壓控震盪器，藉由電流共用的架構來達到降低功率消耗，並以台積電0.18-μm 1P6M的互補式金氧半製程實現。
第二部份為K頻段切換式電容壓控震盪器，使用切換式電容的特性來達到可調頻寬並減小KVCO¬降低對相位雜訊的影響，最後以台積電0.18-μm 1P6M互補式金氧半製程實現。
第三部份為毫米波壓控震盪器，我們呈現了一個Ka 頻段壓控震盪器及60GHz壓控震盪器，其分別採用台積電0.18-μm 1P6M互補式金氧半製程實現低相位雜訊及台積電0.13-μm 1P8M互補式金氧半製程實現低功率消耗。

關鍵字

壓控振盪器、相位雜訊、毫米波

並列摘要

The thesis mainly use CMOS technology to implement the high-frequency VCO, and the thesis is composed of three topics.
The first part is the Ku band current-reused VCO, using current-reused topology to decrease power dissipation. The circuit is implemented in TSMC 0.18-μm one-poly-six-metal (1P6M) CMOS process.
The second part is the K band VCO with switched-capacitor, using the switched- capacitor to adjust frequency range, decrease KVCO and reduce phase noise. The circuit is implemented in TSMC 0.18-μm one-poly-six-metal (1P6M) CMOS process.
The third part is the millimeter-wave VCO. We proposed a Ka band VCO and a 60 GHz VCO. The Ka band VCO use TSMC 0.18-μm CMOS process to reduce phase noise and the 60 GHz VCO use TSMC 0.13-μm CMOS process to achieve low power consumption.

並列關鍵字

VCO, phase noise, millimeter- wave

參考文獻

Reference

[1] B. Razavi, “Design of Analog CMOS Integrated Circuits,” McGraw-Hill, 2001.

[2] B. Razavi, “RF MICROELECTRONICS,” PRENTICE HALL PTR, 1998.

[3] A.Hajimiri and T. H. Lee, “The Design of Low Noise Oscillators,” Kluwer Academic Publishers, 1999.

[4] T. H. Lee, “Planar Microwave Engineering: A Practical Guide to Theory, Measurement and Circuits,” Cambridge University Press, 2004.