全固態硫化銻量子點敏化二氧化鈦薄膜太陽能電池

All-solid-state nanocrystalline TiO2 thin-film solar cells sensitized by antimony sulfide (Sb2S3) quantum dots

蔡庭瑋(Ting-Wei Tsai)

指導教授 ： 刁維光

國立交通大學/理學院/分子科學研究所/碩士(2014年)

https://doi.org/10.6842/NCTU.2014.00813

摘要

在本論文中，我們使用不同電洞傳輸材料包括高分子P3HT、新穎電洞傳輸材料HTM797以及大分子spiro-OMeTAD製作出全固態硫化銻量子點敏化二氧化鈦薄膜太陽能電池，由清華大學化學所陳建添研究團隊合成之HTM797，其結構類似spiro-OMeTAD但高電洞流動率為其特色。在使用P3HT時我們能得到最高之元件效率(~4.2%)，其電荷分離優於其他兩者；而使用HTM797時之元件效率為3.9%，相較於spiro-OMeTAD(效率為3.2%)，HTM797元件擁有更高填充因子以及電荷傳遞速率。因此HTM797相當適合作為硫化銻量子點太陽能電池之新型電洞傳輸材料。
而第二部分，我們添加癸基磷酸進電洞傳輸材料spiro-OMeTAD中，並發現其有增進電洞傳遞以及減少電阻的情形發生。在最初的實驗中，我們嘗試表面修飾而將光陽極浸泡於癸基磷酸溶液中，但元件效率卻並無太大差異，可是我們卻發現其他變化。為了證明我們的想法，我們將癸基磷酸當成一添加劑加進spiro-OMeTAD中並當作硫化銻量子點太陽能電池之電洞傳輸材料，亦量測光電特性、動力學分析以及交流阻抗分析等來證明添加癸基磷酸後的效應。

關鍵字：太陽能電池、硫化銻、電洞傳輸材料、癸基磷酸

關鍵字

太陽能電池 ； 硫化銻

並列摘要

All-solid-state nanocrystalline TiO2 thin-film solar cells sensitized by antimony sulfide (Sb2S3) quantum dots were fabricated with using different hole-transporting materials (HTMs) - Poly(3-hexylthiophene) (P3HT), new HTM (HTM797), 2,2ʹ,7,7ʹ-tetrakis(N,N-di-pmethoxyphenylamine)-9,9ʹ-spirobifluorene (spiro-OMeTAD). HTM797 has a similar molecular structure to spiro-OMeTAD and was synthesized to enhance hole mobility via spiro-structure modification. The Sb2S3/P3HT shows the higher power conversion efficiency (PCE = 4.2%) with faster charge diffusion than the other Sb2S3/HTM devices. The Sb2S3/HTM797 exhibits a device efficiency 3.9% with better fill-factor and faster charge transport than the Sb2S3/spiro-OMeTAD (PCE = 3.2%). With using HTM797, the interfacial charge losses in the Sb2S3 solar cells were reduced due to the enhanced charge transport compared with spiro-OMeTAD.
At the second part, we studied the DPA (decyl-phosphonic acid) doping effect in the spiro-OMeTAD hole transporting material to increase p-type charge carriers (holes) and to reduce charge transport resistance in the Sb2S3/spiro-OMeTAD solar cells. In the preliminary experiments, DPA surface treatment on the TiO2/Sb2S3 layer was done before HTM coating, we observed somewhat variable different device results in the Sb2S3/spiro-OMeTAD solar cells via DPA post-surface treatment. Therefore to obtain reliable and reproducible device performance by using DPA, we demonstrate DPA as a dopant in the spiro-OMeTAD and then DPA-doped spiro-OMeTAD has been employed as hole transporting material for the TiO2/Sb2S3 solar cells. Herein we can provide some of the experimental data of DPA-doped spiro-OMeTAD effect and improved device performance of the Sb2S3/spiro-OMeTAD solar cells.
Key words: Solar Cells, antimony sulfide, hole transport material, 1-decyl phosphonic acid.

並列關鍵字

Solar Cells ； antimony sulfide

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