This thesis present a driving chip for Micro-LED displays, with the ability to drive 10 channels simultaneously. Among the 10 channels, 6 of them have the additional self-repairing and LED condition sensing functions. Most of the Micro-LED display driving systems include the following building blocks: a power generation circuit to provide biases, a timing control circuit to provide synchronous control signals, a gate driver to control the gate of the TFTs on the panel, a source driver to drive the pixel and a gamma correction circuit. The research aims to improve the gate driver, source driver and timing control design to provide a better gate driving ability with bipolar voltage output and a more long-life driving system with the proposed repair function. The driving schemes of micro-LEDs can be roughly divided into three types, which are constant current driving, constant voltage driving and pulse width modulation driving. The thesis adopts the constant current scheme. The constant current driving scheme in the thesis consists of current sink circuits and level shifter circuits. The current sink circuits are in charge of the driving current control, which directly related to the luminance of the micro-LED, and the level shifter circuits are required to effectively turn on and off the TFT switches according to the applied digital control signal. Besides, to lengthen the lifetime of the display, the thesis proposed a novel pixel structure with an additional set of micro-LEDs planted inside. When both micro-LEDs are in good conditions, the chip will drive the two micro-LEDs simultaneously, but when one of the micro-LED burns out, the chip will detect the situation, stop driving the broken one, and increase the driving current of the good one. The chip in the thesis is implemented with TSMC 0.18 m CMOS technology, and occupies an area of 1.75×2.5 mm2. The chip has the ability to sink 10 channels at the same time and provides the micro-LED detecting and repairing functions for the 6 out of the 10 channels. The chip is fed with 25 MHz, 1.8 V serial digital signals and 5 DC biases, which are 12 V, 3 V, 2.5 V, 1.8 V and -3 V, respectively. Three different level shifters are designed to drive three different loadings, however the output levels of the level shifter circuits are all from -3 V to 12 V. The simulated rise time and fall time of the level shifter with RGB-TFT loading are 20.45 ns and 22.66 ns, with RE-TFT loading are 23.87 ns and 19.89 ns, and with G-TFT loading are 23.01 ns and 25.4 ns. The switching speed of the current sink is 1.04 MHz, and it can sink a maximum current of 483.5 A with 8-bit resolution control, which means gray level control of 0 to 255 is achievable with the chip.