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新穎溶膠-凝膠法應用於非揮發性奈米微晶粒記憶體元件

Novel Sol-Gel Derived Nonvolatile Nanocrystal Memory Devices

Abstracts


本文所探討的內容係以經由溶膠-凝膠法配製的化學溶液,研究成長奈米微晶粒的機制。我們以四氯化鋯、四氯化鉿及四氯化矽為溶膠-凝膠溶液之前驅物,旋轉塗佈於晶圓上形成薄膜,經高溫退火後形成含有鋯及鉿之金屬矽氧化物。在本實驗中溫度效應及溶劑效應是影響奈米微晶粒形成的關鍵因素。此外,我們利用溶膠-凝膠法形成之奈米微晶粒材料運用於快閃式記憶體元件中作為記憶體元件之電荷捕陷層,並探討其電性表現。

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Parallel abstracts


In this study, the formation mechanism of nanocrystals (NCs) from the sol-gel spin-coating method had been studied. The ZrCl4, HfCl4, and SiCl4 were used as the sol-gel precursors to form the hafnium and zirconium silicate after rapid thermal annealing at high temperature. We evaluated the impact of temperature and preparation solvent type for the formation of sol-gel derived nanocrystals. In addition, the performance of flash memory with the nanocrystal as the charge trapping layer was also demonstrated.

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