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低功耗綠能電晶體之陡峭次臨界斜率元件

Steep Slope FET for Low Power Electronics Applications

Abstracts


利用鐵電材料閘極堆疊之場效電晶體,其陡峭次臨界擺幅範圍可有效延展,顯示出能有效的改善次臨界擺幅。藉由鐵電負電容的特性放大內部電壓效果造成傳導電導提升118%而通道電導提升16%。此研究提出鐵電極化耦合的概念,且包括陡峭次臨界斜率元件之低功率應用。

Keywords

鐵電 負電容 次臨界擺幅

Parallel abstracts


Using a ferroelectric gate stack, the range of the steep subthreshold swing of FET-elde-ect transistors was extended and improvement in the swing. The ferroelectric negative capacitance e-ect bene-cial to voltage ampli-cation with transconductnace 118% and channel conductance 16%. The concept of coupling the ferroelectric polarization is proposed for low-power applications of steep subthreshold slope devices.

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