氮化銦鎵/氮化鎵多重量子井和磁性薄膜複合物之磁電效應

在本篇論文中，我們研究了由氮化銦鎵/氮化鎵多重量子井和鐵磁性薄膜(鎳和鈷鐵)所組成的複合物之磁電效應，氮化銦鎵/氮化鎵多重量子井和鐵磁性薄膜分別做為磁電效應中的壓電層和磁伸縮層。我們利用兩種不同的方式來示範磁電效應¬－外加電場和雷射激發光源。在外加電場或激發光源下，由於壓電效應和量子侷限史塔克效應，氮化銦鎵/氮化鎵多重量子井將會產生形變，此形變會傳遞至磁性層，藉由磁伸縮效應，進一步改變磁性薄膜的磁滯曲線。我們的研究結果顯示，氮化物半導體在磁光和磁電元件開發上，有一定程度的幫助和應用。

關鍵字

氮化銦鎵/氮化鎵多重量子井、磁性薄膜、磁電效應、量子侷限史塔克效應、壓電效應、磁伸縮效應

並列摘要

In this thesis, the magnetoelectric effect based on the composite consisting of InGaN/GaN multiple quantum wells (MQWs) and ferromagnetic thin film (Ni and FeCo) has been investigated. The InGaN/GaN MQWs and ferromagnetic thin film serve as the piezoelectric and magnetostrictive phases, respectively. We used two different ways to demonstrate the ME effect, including applying an external electric field and an external laser light excitation. By applying an external electric field or an external laser light excitation, the InGaN/GaN MQWs will be deformed due to piezoelectric effect. This deformation is transferred to the ferromagnetic layer, and results in the change in the hysteresis curve of magnetic thin film due to the effect of magnetostriction. The results shown here open up a possibility for the application of nitride semiconductors in magneto-optical and ME engineering.

並列關鍵字

magnetoelectric (ME) effect 、InGaN/GaN multiple quantum wells (MQWs)、magnetic thin film、quantum confined Stark effect (QCSE)、piezoelectric effect、magnetostriction

參考文獻

[6] 謝嘉民, 賴一凡, 林永昌, 枋志堯, 光激發螢光量測的原理、架構及應用, 奈米通訊, 十二卷二期, 2005.

[1] Fiebig, M., Revival of magnetoelectric effect, J. Phys. D: Appl. Phys. 38, R123-R152 (2005).

[3] J. Van Suchtelen, Philips Res. Rep. 27, 28 (1972).

[4] G. Srinivasan, E. T. Rasmussen, J. Gallegos, R. Srinivasan, Y. I. Bokhan, and V. M. Laletin, Phys. Rev. B 64, 214408 (2001).

[11] S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, Appl. Phys. Lett. 73, 2006 (1998).

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氮化銦鎵/氮化鎵多重量子井和磁性薄膜複合物之磁電效應

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