雙波段量子井紅外線光譜讀出電路設計

Design of a Dual-band Quantum-well IR Spectrogram Readout Circuit

鄞詩堯(Shih-Yao Yin)

指導教授 ： 陳少傑

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2015年)

https://doi.org/10.6342/NTU.2015.02869

摘要

本論文提出一個可以提供雙波段量子井紅外線偵測器(Dual-band Quantum-well IR detectors)正偏壓和負偏壓的讀出電路(Readout Circuit)設計。藉由正負偏壓的轉換，我們的讀出電路可以讀出兩種不同波段的紅外光。整個讀出電路的設計包含一個兩階段放大器(Two-Stage Amplifier)所組成的緩衝式直接輸入(Buffer Direct Injection)，一個直接輸入(Direct Injection)，和一個共用的放大器。藉由這個共用的放大器，可以降低晶片的面積使用率以及整體的功耗。這個架構實現在互補式金氧半90奈米製程且其主要面積為80微米乘50微米。在1.2伏特下扣除輸出緩衝(Output Buffer)電路部分總共消耗167微瓦。緩衝式直接輸入的注入效率(Injection Efficiency)超過99.99%。有效的輸入電壓範圍為0.5微安培到1.2微安培，且輸出電壓擺幅接近0.55伏特。

關鍵字

雙波段 ； 量子井 ； 讀出電路 ； 緩衝式直接輸入 ； 直接輸入

並列摘要

This work presents the design of a readout circuit (ROIC) that provides positive and negative biases to a Dual-band Quantum-well (DQW) IR detectors. These two biases allow two bands of infrared light be detected and passed to the ROIC. The ROIC design contains a buffer direct injection (BDI) with a two-stage amplifier, direct injection (DI), and a shared amplifier. Using a shared amplifier, we can reduce the chip area and power consumption. A prototype is implemented in 90-nm 1P9M CMOS technology and its active area occupies 80 μm × 50 μm. Operating under 1.2V, the ROIC works at 0.3MHz frequency and has a power consumption of 167 μW without considering the output buffer. The injection efficiency of the BDI in this design can be up to 99.99%. The input photocurrent range is from 0.5 μA to 1.2 μA, and output swing approaches to 0.55V.

並列關鍵字

Dual-band ； Quantum-well ； Readout Circuit ； Buffer Direct Injection ； Direct Injection

參考文獻

[1]W. Herschel, "Experiments on the Refrangibility of the Invisible Rays of the Sun," Philosophical Transactions of the Royal Society of London, vol. 90, pp. 284-292, 1800.

[3]N. R. Butler, R. J. Blackwell, R. Murphy, R. J. Silva, and C. A. Marshall, "Low-cost Uncooled Microbolometer Imaging System for Dual Use, " Infrared Technology XXI, Proc. SPIE 2552, Sep. 1995.

[4]L. Goldminz, B. Sabbah, Z. M. Friedman, and Y. Nemirovsky, "Mercury-Cadmium-Telluride Photovoltaic and Photoconductive Focal-Plane Arrays," Optical Engineering, vol. 32, pp. 952–957, May 1993.

[6]A. Rogalski, "Competitive Technologies of Third Generation Infrared Photon Detectors," Opto-Electronics Review, vol. 14, pp. 84-98, Mar. 2006.

[12]C.-C. Hsieh, C.-Y. Wu, T.-P. Sun, F.-W. Jih, and Y.-T. Cherng, "High-Performance CMOS Buffered Gate Modulation Input (BGMI) Readout Circuits for IR FPA," IEEE Journal of Solid-State Circuits, vol.33, no.8, pp. 1188-1198, Aug. 1998.