以標準CMOS製程製作之RF MEMS接觸式可變電感

CMOS Compatible Contact Mode RF MEMES Variable Inductor

陳俊志(Jun-Zhi Chen)

指導教授 ： 黃榮堂

國立臺北科技大學/機電學院/機電整合研究所/碩士(2005年)

https://doi.org/10.6841/NTUT.2005.00131

摘要

本篇論文旨在利用標準CMOS製程配合微機電(MEMS)的幾項後製程來製作接觸式可變電感。接觸式可變電感包括控制用的可動與固定兩平行電極，如下電壓極板與螺旋電感。控制用的可動電極為一懸臂結構，受控制用固定電極的靜電壓作用，懸臂漸次變形，設於懸臂靠端點的可動電極即使在接觸螺旋電感後，仍可繼續變形，直至可動電極板完全與螺旋電感接觸後停止其電感變化。本接觸式可變電感具備高電感值變化率，體積小，製作容易，且可與CMOS製程相容。用CMOS製程的插銷層(Via)、金屬層(Metal)、多晶矽層(Poly)等來實現，一貫完成可成為積體電路元件的高變化率接觸式可變電感之技術。

關鍵字

標準CMOS製程 ； 微機電製程 ； 可變電感 ； 懸臂結構

並列摘要

This thesis presents a variable inductor by using CMOS processes and extra post-process techniques of MEMS. Contact mode variable inductor consists of voltage-control actuator and stationary electrode, such as inductor. The voltage-control actuator is cantilever beam and the diaphragm will deform in response to applied electrostatic voltage and change the gap between the two actuator-electrodes. Even after the movable electrode begins to touch the stationary electrode of inductor, the actuator can still increase its voltage until the movable electrode fully touch the stationary electrode of inductor. The contact mode variable inductor can achieve large inductance variation range, reduced area, easy fabrication, and compatible with CMOS technique.

並列關鍵字

CMOS ； MEMS ； Variable Inductor ； Cantilever beam

參考文獻

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