以共濺鍍法製備AZO/CoFeZrB 複合膜之微結構研究

Microsturcture of the AZO/CoFeZrB Composite Films Prepared by co-Sputtering

王思瑋(Sih-Wei Wang)

指導教授 ： 陳國駒

義守大學/理工學院/材料科學與工程學系/碩士(2014年)

https://doi.org/10.6343/ISU.2014.00307

摘要

本實驗使用靶材為AZO(Al:ZnO)與Co52Fe20Zr8B20，以DC 直流電漿
共濺渡製備薄膜，經由調整濺鍍功率來改變薄膜成分比例，以探討其對
CoFeZrB 薄膜的熱性質、結晶行為及電磁特性影響。
根據DSC 的熱分析，薄膜熱性質由計算結果顯示A20C80 (AZO
19.73 at%) 條件有最高結晶活化能為515.14 (kJ/mole)，且有隨ZnO 含量
的增加時，結晶活化能就降低的現象，當AZO 的含量大於46.68at%時，
結晶活化能則是增加，因此AZO 含量在46.68 at%有活化能降低的臨界值。
在固定CoFeZrB 功率，調整AZO 功率的條件下，經退火溫度在Tx
以下時，各試片明視野結晶相之中本來沒有明顯晶粒產生，當溫度升至
在Tx 以上、Tp 以下545℃時，有明顯的ZnO 結晶相產生，且AZO 含量
越高，晶粒尺寸越大，隨退火溫度上升，。
在AZO 固定功率，調整CoFeZrB 功率的條件下，無論CoFeZrB 濺
鍍功率的多寡，薄膜在經過Tg 點以下溫度退火後便開始產生結晶，且從
視野圖可發現，試片之晶粒隨AZO 含量減少有逐漸變小的現象，並廣
泛分佈在薄膜中，漸趨穩定的狀態。

關鍵字

none

並列摘要

The target materials used in this experiment include AZO(Al:ZnO) and Co52Fe20Zr8B20. The thin films are prepared by employing the method of DC-plasma co-deposition. By changing the power of deposition that varies the composition of the thin films, the thermal, structural, electrical and magnetic properties of these CoFeZrB thin films are scrutinized.
According to the thermal analysis, the sample of A20C80 (19.73 at% of ZnO) has the highest activation energy of crystallization that is 515.14 (kJ/mole). The activation energy of crystallization decreases when the concentration of ZnO increases. The minimum activation energy of crystallization is reached when the concentration of ZnO is 46.68 at%.
By keeping the deposition power of CoFeZrB but varying the deposition power of AZO, the samples show no evidence of obvious crystalline grains of ZnO.
However, the crystalline grains of ZnO occurs when the annealing temperature is 545℃ (above Tx, but below Tp ). The grain size increases as the concentration of ZnO increases.
By keeping the deposition power of AZO but varying the deposition power of CoFeZrB, the samples crystalize after annealing below the temperature of Tg no matter what the deposition power of CoFeZrB is. From the bright-field images of TEM, the grains are widely distributed and stabilized in the thin films, moreover,the grain size decreases as the concentration of ZnO decreases.

並列關鍵字

nove

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