利用實驗規劃法研究磁控濺鍍氧化銦錫薄膜之最佳化製程應用於彩色濾光片

Optimization of the Deposition Process of ITO Thin Films Using Design of Experiment Method for Color Filter

張家瑋(Jia-Wei Chang)

指導教授 ： 柯正浩

元智大學/電機通訊學院/電機工程學系/碩士(2008年)

摘要

彩色濾光片(Color Filter)表面之氧化銦錫薄膜主要作為與薄膜電晶體(Thin Film Transistor)基板兩者間之共通電極，其良好的導電性及在可見光中之高穿透率為必要之特性條件。而實驗設計法(DOE)已在工業界被認定為最佳化複雜製程之最有效的工具。本文中利用實驗設計方法以室溫直流磁控式濺鍍法濺鍍氧化銦錫薄膜於無鹼玻璃上，再進行大氣壓退火製程，藉由濺鍍功率，氬氣分壓及氧氣壓流量三個操作參數交互影響之關係嘗試得到一最適化條件。實驗後應用統計分析軟體檢驗交互因子及主要因子，並找出其敏感操作參數與預測最佳化製程。嘗試得到一低阻值係數、高穿透率且不影響附著性之最佳參數，進而改善原先較不理想之薄膜光電特性。實驗結果顯示氧氣/氬氣流量比率及濺鍍功率對於氧化銦錫薄膜光電特性均有一定程度的影響，因此對於氧空缺之多寡、薄膜之厚薄..等均須適當的控制及最適化方能得到較佳之薄膜特性，其中又以氧氣流量為最敏感之參數。而此次實驗條件中所得到之最適化條件已能大幅改善氧化銦錫薄膜之光電特性，進而得到彩色濾光片理想之高導電率及色彩輸出品質。

關鍵字

實驗規劃法 氧化銦錫薄膜 彩色濾光片

並列摘要

Indium tin oxide (ITO) thin films were deposited on non-alkali glass substrates using dc magnetron sputtering at room temperature. Design of experiment (DOE) has long been recognized as a powerful method to optimize a complex process in industry. The purposes of present study were to verify the feasibility and reliability of the application of DOE method on ITO process of color filter (CF) and optimize the processing parameters for the deposition process, in which the sensitive parameters that affect the film properties were also identified. The sputtering power, Argon flow rate, and Oxygen flow rate were chosen to be the operating parameters. The interaction effects plots analysis and main effects plots analysis were conducted to assess the sensitive parameters and predict the optimum conditions. Based on the statistical analysis, the most sensitive parameter in the ITO process of CF was the Oxygen gas flow rate. The optimum deposition conditions were also acquired for high conductivity and color quality of color filter.

並列關鍵字

ITO Thin Films Design of Experiment Color Filter

參考文獻

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