氧化鉿基電阻式記憶體之阻值切換與元件類神經特性之研究

Study on the Resistive Switching Characteristics and Synaptic Behaviors of HfOx-based RRAM Devices

李宇哲(Eric Yeu-Jer Lee)

指導教授 ： 鄭晃忠 ； 陳冠能

國立交通大學/電機學院/電子工程系所/碩士(2020年)

摘要

無資料

關鍵字

電阻式記憶體 ； 雙層阻值結構 ； 類神經運算 ； 仿生運算 ； 電子突觸元件

並列摘要

無資料

並列關鍵字

Resistive Random Access Memory ； Bilayer RRAM ； Filament type ； Neuromorphic computing ； Synaptic device

參考文獻

[1] G. Burr et al., "Large-scale (512kbit) integration of multilayer-ready access-devices based on mixed-ionic-electronic-conduction (MIEC) at 100% yield," in 2012 Symposium on VLSI Technology (VLSIT), 2012: IEEE, pp. 41-42.

[2] A. Sawa, "Resistive switching in transition metal oxides," Materials Today, vol. 11, no. 6, pp. 28-36, 2008, doi: 10.1016/s1369-7021(08)70119-6.

[3] C.-W. Hsu et al., "Self-rectifying bipolar TaO x/TiO 2 RRAM with superior endurance over 10 12 cycles for 3D high-density storage-class memory," in 2013 Symposium on VLSI Technology, 2013: IEEE, pp. T166-T167.

[4] C.-W. Hsu et al., "3D vertical TaO x/TiO 2 RRAM with over 10 3 self-rectifying ratio and sub-μA operating current," in 2013 IEEE International Electron Devices Meeting, 2013: IEEE, pp. 10.4. 1-10.4. 4.

[5] H. S. P. Wong et al., "Metal–Oxide RRAM," Proceedings of the IEEE, vol. 100, no. 6, pp. 1951-1970, 2012, doi: 10.1109/jproc.2012.2190369.