The present study has been successful prepared the Ti and Zn -doped ITO powders by the methods of co-precipitation and solvothermal, and the doping concentration are 4at%, 6at%, and 8at%. The effects of doped-elements and content on the optical and electricity properties of ITO powders were investigated. By XRD diffraction analysis, we know that the doped-elements would not change the crystal structure of indium tin oxide. The band-gap energy of Ti and Zn -doped ITO powders tended to increase and then the spectrums appeared the trends of blue-shifted by UV-Visible-NIR spectrophotometer. With the increment of the doping concentration, the carrier concentration increased and the mobility decreased. The Ti and Zn –doped ITO powders have no significant effect on the conductivity.