stands for Digital Object Identifier
and is the unique identifier for objects on the internet. It can be used to create persistent link and to cite articles.
Using DOI as a persistent link
To create a persistent link, add「http://dx.doi.org/」
before a DOI.
For instance, if the DOI of an article is 10.5297/ser.1201.002 , you can link persistently to the article by entering the following link in your browser: http://dx.doi.org/ 10.5297/ser.1201.002 。
The DOI link will always direct you to the most updated article page no matter how the publisher changes the document's position, avoiding errors when engaging in important research.
Cite a document with DOI
When citing references, you should also cite the DOI if the article has one. If your citation guideline does not include DOIs, you may cite the DOI link.
DOIs allow accurate citations, improve academic contents connections, and allow users to gain better experience across different platforms. Currently, there are more than 70 million DOIs registered for academic contents. If you want to understand more about DOI, please visit airiti DOI Registration （ doi.airiti.com ） 。
-  Yat-Hei Lam and Wing-Hung Ki, “A 0.9V 0.35um adaptively biased CMOS LDO regulator with fast transient response,” IEEE International Solid-State Circuits Conference, pp. 442–626, Feb. 2008.
-  Chunlei Shi, B. C. Walker, E. Zeisel, B. Hu and G. H. McAllister, “A highly integrated power management IC for advanced mobile applications,” IEEE Journal of Solid-State Circuits(JSSC), vol. 42, no. 8, pp. 1723–1731, Aug. 2007.
-  Bin-Da Liu, Ying-Cheng Wu and Chun-Yueh Huang, ”A low dropout voltage regulator with programmable output,” IEEE Industrial Electronics and Applications (ICIEA), pp. 3357-3361, May 2009.
-  Yasuyuki Okuma, Koichi Ishida, Yoshikatsu Ryu, Xin Zhang, Po Hing Chen, Kazunori Watanbe, Makoto Takamiya, and Takayasu Sakurai, “0.5-V input digital LDO with 98.7% current efficiency and 2.7-μA quiescent current in 65 nm CMOS,” IEEE Custom Integrated Circuit Conference(CICC), pp. 1-4, September 2010.
-  Masafumi Onouchi, Kazuo Otsuga, Yasuto Igarashi, Toyohito Ikeya, Sadayuki Morita, Koichiro Ishibashi, and Kazumasa Yanagisawa, “A 1.39-V input fast-transient-response digital LDO composed of low-voltage MOS transistors in 40-nm CMOS process,” IEEE Asian Solid-State Circuits Conference (ASSCC), pp. 37-40, November 2011.
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