Synthesis and Characterization of Well-Aligned P-Doped Zinc Oxide Nanowires

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Synthesis and Characterization of Well-Aligned P-Doped Zinc Oxide Nanowires

高準直性磷摻雜氧化鋅奈米線的合成及特性研究

林強 , Masters　　Advisor：周立人　　

英文

氧化鋅；磷摻雜； p-型； ZnO ； P-doped ； p-type

Abstract │ Reference (63) │ Altmetrics

Abstract 〈TOP〉

In this thesis, phosphorus-doped ZnO nanowires were grown on silicon substrate using chemical vapor transport and condensation process using zinc phosphide (Zn3P2) as the dopant source. Besides, single-crystal P-doped ZnO nanowires have their growth axis along with the <001> direction and form well-aligned arrays on Si substrate. Optimum process parameters of fabricating P-doped ZnO nanowires were proposed including growth temperature, weight of ZnO/C source, and growth time duration.
    Characterization and analysis of P-doped ZnO nanowires were discussed with many analytic techniques. EDX spectrum shows that the P atom ratio in the ZnO nanowire is approximately 0.8%. XPS spectrum shows that the peak related to the P (2p) is observed located at 133.3 eV, which could be regarded as P-O bonding state. PL spectra indicate the existence of PZn-2VZn complex defect in the P-doped ZnO nanowires, which is suggested to be the acceptor responsible for the p-type conduction. Furthermore, Single-NW-based field-effect transistors were used to study the electrical transport properties of nanowires.

Reference ( 63 ) 〈TOP〉

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連結：
[2] P. C. Chang, Z.Y. Fan, W. Y. Tseng, A. Rajagopal, and J. G. Lu, “β-Ga2O3 nanowire : Synthesis characterization and p-channel field-effect transistor” Appl. Phys. Lett., 87, 222102 (2005)
連結：
[3] P. Deb, H. Kim, Y. Qin, R. Lahiji, M. Olive, R. Reifenberger, and T. Sands, “GaN Nanorod Schottky and p-n Junction Diodes” Nano Lett., 6, 2893 (2006)
連結：
[4] B. Y. Geng, X. W. Liu, X. W. Wei, S. W. Wang, and L. D. Zhang, “Low-temperature growth of β-Ga2O3 nanobelts through a simple thermochemical route and their phonon spectra properties”, Appl. Phys. Lett., 78, 113101 (2005)
連結：
[6] M. S. Sander, R. Gronsky, Y. M. Lin, and M. S. Dresseelhaus, “Plasmon excitation modes in nanowire array”, J. Appl. Phys., 89, 2733 (2001)
連結：

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