應用於多接面高效率矽薄膜太陽能電池之穿隧複合接面及中間反射層的開發

張立欣

doi:10.6842/NCTU.2012.00908

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應用於多接面高效率矽薄膜太陽能電池之穿隧複合接面及中間反射層的開發

Development of Tunneling Recombination Junction and Intermediate Reflective Layer for High Efficiency Multi-Junction Thin-Film Solar Cells

張立欣 , Masters　　Advisor：蔡娟娟;紀國鐘　　

英文 DOI： 10.6842/NCTU.2012.00908

多階面太陽能電池；穿隧複合接面；中間反射層；非晶矽薄膜太陽能電池； Multi-Junction Thin-Film Solar Cells ； Tunneling Recombination Junction ； Intermediate Reflective Layer ； a-Si:H Thin-Film Solar Cells

Abstract │ Reference (86) │ Altmetrics

Abstract 〈TOP〉

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In this thesis, the Si-based thin-film tandem solar cells were prepared by a 27.12 MHz radio-frequency plasma-enhanced chemical vapor deposition (PECVD) system. In order to improve the performance of the a-Si:H / a-Si:H tandem solar cell, we introduced a microcrystalline silicon (μc-Si:H(n)) tunneling recombination junction (TRJ) layer between the top and the bottom cells to assist carrier recombination as well as the cell performance. The conductivity of μc-Si:H(n) film was the critical factor to affect cell performance. A thicker μc-Si:H(n) layers can have better conductivity but would increase the absorption loss in the cells. The TRJ was optimized to be thin and highly crystallized. In our results, the optimized thickness of the μc-Si:H(n) was 23 nm and the crystalline volume fraction (XC) was approximately 53%. 
 In addition, TRJ was also employed in a-Si1-XGeX:H tandem cell due to its higher optical absorption in long wavelength region. In this structure, in order to increase the optical reflection for the top cell, we used the n-type hydrogenated microcrystalline silicon oxide (μc-SiOX:H(n)) as an intermediate reflecting layer (IRL) between a-Si:H top cell and a-Si1-XGeX:H bottom cell. The μc-SiOX:H(n) reduced the optical loss in a-Si1-XGeX:H bottom cells due to a wider bandgap. Moreover, the enhancement of the current gain in a-Si:H top cell was obtained due to the stronger reflection. The employment of μc-SiOX:H(n) reflective layer can also act as a seed layer for the TRJ afterwards to further increase the crystalline fraction.
As a result, we used μc-Si:H(n) and/or μc-SiOX:H(n) layers as TRJ or IRL to obtain optimum cell efficiencies. The open circuit voltage (VOC), short circuit current density (JSC) fill factor (F.F.) and conversion efficiency (η) of a-Si:H / a-Si:H cell with the optimized μc-Si:H(n) TRJ were improved to 1.78 V, 7.6 mA/cm2, 72.8% and 9.86%, respectively. For a-Si:H / a-Si1-XGeX:H solar cell with μc-SiOX:H(n)/μc-Si:H(n) TRJ structure, the VOC, JSC, F.F. and η were improved to 1.61 V, 8.23 mA/cm2, 68.2% and 9.03%, respectively.

Reference ( 86 ) 〈TOP〉

[5] D.L. Stabler and C.R. Wronski, "Reversible conductivity changes in dischargeproduced amorphous Si," Appl. Phys. Lett. , vol. 31, 292, 1977.
連結：
[6] C. Lee, H. Efstathiadis, J. E. Raynolds, P. Haldar, "Two-dimensional Computer Modeling of Single Junction a-Si:H Solar Cells," PVSC 34th IEEE, 001118, 2009.
連結：
[7] Z. Q. Li*, Y. G. Xiao, Z. M. Simon Li, "Modeling of multi-junction solar cells by Crosslight APSYS," 2006.
連結：
[8] R. Schropp and M. Zeman, Amorphous and microcrystalline silicon solar cells: modeling, materials, and device technology: Kluwer Academic Publishers, 1998.
連結：
[9] A. Matsuda and K. Tanaka, "Plasma Spectroscopy Glow-Discharge Deposition of Hydrogenated Amorphous-Silicon," Thin Solid Films, vol. 92, 171, 1982.
連結：

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