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利用自我複製效應開發具有寬波段、全角度抗反射結構應用於矽晶太陽能電池上

Using Autocloning Effects to Develop Broad-bandwidth, Omnidirectional Antireflection Structures for Silicon Solar Cells

摘要


在本研究中,我們利用自我複製技術在矽晶太陽能電池中常用的金字塔結構上開發製作具有寬波段、全角度的抗反射結構,並有系統的分析各種金字塔結構的反射率與角度之關係。透過濺鍍三層自我複製薄膜於空氣與矽介面可以有效降低此介面的折射率差異,此方法可以有效使次波長或者微米尺寸的金字塔結構平均反射率在太陽能電池工作波段以及0度角至60度角入射的範圍內大幅降低至2-3%。因此,結合了光學薄膜以及漸變折射率結構的自我複製技術為一種具有可行性並可相容於現今太陽能電池之寬波段、全角度抗反射結構的技術。

並列摘要


In this study, we used the autocloning effect on pyramid structures to develop broad-bandwidth, omnidirectional antireflection structures for silicon solar cells. The angular dependence of reflectance on several pyramid structures was systematically investigated. The deposition of three-layer autocloned films reduced the refractive index gap between air and silicon, resulting in an increase in the amount of transmitted light and a decrease in the total light escaping. The average reflectance decreased dramatically to ca. 2-3% at incident angles from 0 to 60º for both sub-wavelength and micrometer-scale pyramid structures. Therefore, the autocloning technique, combined with optical thin films and optical gradient structures, is a practical and compatible method for the fabrication of broad-bandwidth, omnidirectional antireflection structures on silicon solar cells.

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