Tunnel Magneto Resistance of the Extended Spin Field Effect Transistors

Qing-Hu Zhong ； Wei Luo ； Yun-Chang Xiao

《Chinese Journal of Physics》 51卷6期 (2013/12) Pp. 1296-1304

https://doi.org/10.6122/CJP.51.1296

並列摘要

The tunnel magneto resistance (TMR) of the Rashba and Dresselhaus spin-orbit coupling (R-D SOC) in the Datta-Das spin field effect transistor (SFET) is investigated. By taking into account the factors such as ferromagnetic leads, band mismatches, and potential barriers, our study is devoted to find the spin-orbit coupling region size and the R-D SOC strength effects on the TMR of the SFET. It is shown that changing the constitution of the Rashba and Dresselhaus effect can make the TMR get a positive or negative value for different model lengths. A settled Dresselhaus intensity with varying Rashba intensities can also easily give a pure positive or negative TMR at a fixed model length.

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