砷化鎵及磷化銦鎵單接面太陽電池後磊晶製程之研究

The study on the post-growth manufacturing process for GaAs and InGaP solar cells

鄭雅雯(Ya-Wen Cheng)

指導教授 ： 廖森茂

中原大學/工學院/電子工程研究所/碩士(2004年)

https://doi.org/10.6840/cycu200400114

摘要

本論文中我們將探討在磊晶後利用不同製程方式來提高Ⅲ-Ⅴ族太陽電池的高轉換效率，在此我們發現利用邊緣蝕刻處理不但可以降低砷化鎵（GaAs）太陽電池之暗電流及串聯電阻，而且對於其開路電壓（VOC）、充滿因素（FF）及轉換效率（EFF）皆有明顯的提高，利用邊緣蝕刻處理確實能夠提高砷化鎵太陽電池之整個特性；再者，我們將利用TLM找出低特徵阻值之PdGeTiPt金屬材料，並利用砷化鎵做為磷化銦鎵太陽電池之上下接觸材料來降低整個太陽電池之串聯電阻。最後，改變太陽電池在不同的電極線與電極線之間距，來探討對於串聯電阻與間距間之關係，且證明出，間距越近確實能夠降低其串聯電阻。

關鍵字

串聯電阻 ； 砷化鎵太陽能電池 ； 邊緣蝕刻 ； 磷化銦鎵太陽能電池

並列摘要

In this dissertation, we would like to improve the characteristics of solar cells by changing various post-growth manufacturing processes. The post-etching succeeded to reduce dark current and series resistance with increasing open circuit voltage (Voc), fill factor (FF), and efficiencies (EFF) for GaAs solar cell. We found the low specific resistance (~10-7Ω㎝2) of PdGeTiPt by using Transmission-Line Method (TLM) and realize with InGaP solar cells that can reduce the series resistance. Finally, we attempted to change the different spacing of solar cells’ grid fingers. The relationship between the series resistance and the spacing of grid fingers was proved that the near spacing of solar cell’s interdigital finger would obviously reduce the series resistance.

並列關鍵字

InGaP solar cell ； series resistance ； GaAs solar cell ； post-etching

參考文獻

Chapter 1. References

5. Prince, M. B., Proc. 8th E. C. Photovolt. Solar Energy Conf, Dordrech: Kluwer Academic Publ., 1988, p.1632.

8. Coutts, T. J., and M. Yamaguchi, Current Topics in Photovoltaics, 3, T. J. Coutts, and J. D. Meakin, eds., New York: Academic Press, 1988, p.79.

Chapter 2. Reference

1. Dieter K. Schroder, “Semiconductor material and device characterization 2th”, John Wily&Sons, p.209.