許多感測材料(例如:氮化鋁、非晶形三氧化鎢、非晶形矽氫、鈦酸鉛、氧化鋁、氧化鉭、氮化矽、氧化錫...等)已經被研究且應用於酸鹼離子感測場效電晶體(pH-ISFET)元件上。在此論文由相關文獻中,我們報告氮化鋁、鈦酸鉛、氧化鋁、氧化鉭、氮化矽、和氧化錫可以分別在酸鹼溶液中(pH1~12)進行感測,而非晶形三氧化鎢與非晶形矽氫則可於酸性溶液中(pH1~7)進行感測。此外,在此論文中我們亦提出一種新型分離式結構的延伸閘極場效電晶體(EGFET),此結構是一種改良式延伸閘極場效電晶體,而氧化錫被當成此結構中的感測膜,同時並將酵素固定在氧化錫薄膜上,應用於生醫感測器(biosensor)中。
There are several sensing materials (such as: AlN, a-WO3, a-Si:H, PbTiO3, Al2O3, Ta2O5, Si3N4, SnO2...) have been investigated and applied for the pH-ISFET devices. In this review article, we report that the AlN, PbTiO3, Al2O3, Ta2O5, Si3N4 and SnO2 can be detected in the pH=1~12, and the a-WO3 and a-Si:H were applied in acid buffer solutions (pH=1~7). In addition, we introduced a novel separative structure of EGFET, this structure is an improvement of extended gate structure ISFET, and the tin oxide thin film (SnO2) was prepared as a pH sensing membrane and firstly immobilized the enzyme on the tin oxide pH-sensitive film for the biosensor application.