化學機械研磨製程中微刮傷缺陷之改善

The Micro Scratch Defect Improvement of Chemical Mechanical Polishing process

張宇偉(Yu-Wei Chang)

指導教授 ： 李安謙

國立交通大學/工學院/工學院半導體材料與製程設備學程/碩士(2015年)

https://doi.org/10.6842/NCTU.2015.00548

摘要

化學機械研磨(CMP)製程是半導體製程中全面平坦化的主要關鍵技術，利用化學機械研磨的平坦化製程，以確保後續的製程不會因為晶片表面凹凸不平造成之線路位移、薄膜覆蓋能力不佳或曝光顯影製程中對準之偏移，進而影響製程之良率以及元件之穩定性。
本論文主要研究內容是控制化學機械研磨之部分關鍵條件來改善化學機械研磨過程中所形成之微刮傷，以避免微刮傷造成生產中晶圓之電路斷線或短路等缺陷之形成，維持化學機械研磨製程的穩定性；此外，程度較輕微之微刮傷，縱使未造成生產中晶圓之電路斷線或短路等功能性缺失，也會引起晶圓外觀上之瑕疵，造成目檢之不良率升高而降低產品品質。
經由生產過程中所收集之資訊找出生產關鍵因素例如研磨液供應系統，研磨墊、研磨墊修整器與刮傷情形之間的關係，利用實驗計劃法找出最佳控制參數，並且在後續驗證中證實該控制參數之穩定性，以確保控制方式之有效性，降低微刮傷所造成之缺陷，提升產品之良率與元件之可靠度。

關鍵字

微刮傷 ； 研磨墊 ； 修整器

並列摘要

The Chemical Mechanical Polishing (CMP) is the key technology to the global planarization in the semiconductor manufacturing process. The Chemical Mechanical Polishing planarization process ensures that the follow-up process will not displacement by the surface uneven, the poor ability of the film coverage, and the exposure to alignment offset of the development process. Thereby affects the yield rate and the process stability of the components.

　　This thesis is based on controlling the critical part of conditions of the chemical mechanical polishing process in order to improve the formation of the micro scratch in Chemical Mechanical Polishing process. In order to avoid the micro scratch which causes the circuit broken or the short circuit, to maintain the stability of the chemical mechanical polishing process. In addition, the minor degree of micro scratch, even without causing the functional deletion, such as circuit broken or short circuit. It can also cause the defects on the appearance of the wafer, which causes the defective rate increasing, and decrease the quality of the product.

　　Identify the key factors of production. For example: the relationship between the polishing slurry supply system, a polishing pad, a polishing pad conditioner and micro scratch. Use the planning of the experiment to find the optimal control parameters, and to confirm the stability of the control parameter in a subsequent verification. In order to ensure the effectiveness of the control mode, to lower the defects caused by micro scratch, and to enhance product yield and device reliability.

並列關鍵字

Micro Scratch ； Pad ； Dresser

參考文獻

[3]. 莊志豪，研磨墊調節之磨削機構及其對化學機械研磨(CMP)製程之影響，國立交通大學碩士論文

[11]. 李奕嶢，化學機械研磨微刮傷發生的原因與改善方法，國立交通大學碩士論文，2011(100)年，8 月。

[15]. 孫國郎“化學機械研磨(CMP)應用在不同絕緣層與金屬層終點偵測技術的研究 ＂，國立成功大學電機工程學系碩士論文，2005(94)年，6 月。

[1]. 陳炤彰、謝啟祥，研磨液特性於化學機械平坦化之探討，機械月刊第三十六卷第十一期, 2010 年11 月號, pp.88-98。

[2]. Annette Crevasse/Drew Chambers，提升研磨墊與調節器作用效率，新電子雜誌237期12月號