- 期刊
Cross-die BISR Design for the 3D-stacked Wide-I/O DRAM
三維堆疊Wide-I/O動態隨機存取記憶體之跨層自我修復架構設計
並列摘要
A cross-die built-in self-repair (BISR) design for the 3D-stacked Wide-I/O DRAM is presented in this paper. The redundant control unit (RCU) of the proposed design acts as a lead role to simultaneously support self-die fault repair and cross-die fault repair. A logic die and 2 memory dies (MDs) stacking configuration is used to play a dedicated circuit to demonstrate the feasibility of the proposed design. Compare with the method that without cross-die fault repair scheme, the proposed design can catch relatively superior performance in yield upgrade with tiny extra area overhead penalty.
延伸閱讀
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