應用於射頻與高速輸入輸出電路的靜電放電防護技術

An ESD Protection Technique for Radio-Frequency and High-Speed I/O Circuits

葉致廷(Chih-Ting Yeh) ； 梁詠智(Yung-Chih Liang)

《電腦與通訊》 132期 (2010/04) Pp. 129-136

https://doi.org/10.29917/CCLTJ.201004.0018

摘要

操作於順向偏壓的二極體由於具有較小的寄生負載效應與較高的靜電放電耐受度，因此，它常被廣泛地使用於射頻前端電路與高速傳輸的輸入輸出端，以做為晶片上有效的靜電放電防護元件。為了增進二極體的靜電放電電流分佈效率以及降低其寄生電容，我們提出了新型的靜電放電防護二極體佈局結構，包括八角型、四方中空型與八角中空型，經量測結果證實：在相同的靜電放電耐受度下，具有中空結構的二極體其寄生電容較長條型與四方型的二極體為小。因此，採用此較小寄生電容的新型二極體可以降低射頻與高速傳輸電路的訊號衰減。

關鍵字

靜電放電 ； 射頻 ； 二極體 ； 佈局

並列摘要

Due to the small parasitic loading effect and high electrostatic discharge (ESD) robustness for CMOS integrated circuits (ICs), a diode operated at forward-biased condition has been widely used as an ESD protection device for radio-frequency (RF) front-end and high-speed input/output (I/O) circuits. In order to provide higher efficiency on current distribution and smaller parasitic capacitance, three different layout topologies such as octagon, waffle-hollow, and octagon-hollow are proposed in this work. From the measured results, it is proven that our structures can provide smaller parasitic capacitance with the same ESD robustness level than the stripe or waffle diodes. Therefore, the signal degradation problem can be reduced, the ESD performance of RF and high-speed transmission circuit can be improved as well.

並列關鍵字

Electrostatic discharge ； ESD ； Radio-frequency ； RF ； Diode ； Layout