原子層沉積技術是以前驅物氣體與基板表面所產生的交互反應進行薄膜成長,其優點為精密的厚度與成分控制與大面積均勻鍍膜,所以被視為半導體製程重要的前瞻技術。在本文中我們將介紹原子層沉積技術的原理、發展及機台設計的概念,並討論在半導體產業、功能性鍍膜與奈米結構鍍膜之應用。
The atomic layer deposition (ALD) is carried out by using exchange reaction between precursor gas molecules and substrate. Good thickness uniformity in a large area and precise control in thickness and composition make atomic layer deposition become an enabling technology for the semiconductor industry. In this article, principle, development and design concept of ALD system will be given. Applications of ALD on semiconductor device, functional thin film and nanostructure coating will be introduced in detail.