退火溫度對氧化銦鎵鋅薄膜之特性研究

本研究中，使用直流濺鍍機系統(DC Sputter)沉積氧化銦鎵鋅層，採用反轉交錯結構(Staggered Structure)之薄膜電晶體，並在不同溫度下的退火效應(Annealing Effect)，以釐清退火溫度對於氧化銦鎵鋅薄膜電晶體的特性影響。在本論文中，亦使用各種材料分析技術及儀器，如X光薄膜繞射儀(X-Ray Diffraction, XRD)，原子力顯微鏡(Atomic Force Microcopy, AFM)等來針對氧化銦鎵鋅半導體薄膜之結晶性(Crystallization)、薄膜厚度和薄膜表面(Surface Morphology)等特性進行分析與研究，並對氧化銦鎵鋅薄膜製程電晶體元件，進行電晶體元件電性特性的分析與探討。

關鍵字

氧化銦鎵鋅薄膜；直流濺鍍系統；退火溫度效應； X光薄膜繞射儀；原子力顯微鏡

並列摘要

The Un-doped indium gallium zinc oxide (InGaZnO) films with inverted staggered thin film transistor (TFT) structure were deposited by DC sputtering system in this study. The annealing effects in different temperatures were applied to clarify the impact on the indium gallium zinc oxide thin film transistor characteristics. Several material analysis methods, the XRD, AFM, XPS, and SEM, were utilized to study the crystallization, and surface morphology of IGZO films. Electrical characteristics and conductivity mechanisms of IGZO TFT devices were also investigated with I-V characteristic analysis.

並列關鍵字

IZGO ； DC Sputtering System ； Annealing Temperature Effect ； X-Ray Diffraction ； Atomic Force Microcopy

參考文獻

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