- 期刊
- OpenAccess
以不同模型技術評估雙閘極互補式金氧半場效電晶體的電路效能
On the Evaluation of Double-Gate CMOS Circuit Performance via Different Modeling Techniques
摘要
此論文主要是探討雙閘極互補式金氧半場效電晶體模型技術，其應用範圍在於元件與電路的模擬。這些模型技術包括了查表模型、精簡模型及混合式模擬，各種模型技術各有其特色。我們運用了不同的模型技術來評估雙閘極互補式金氧半場效電晶體的電路效能，並且在電路應用的設計上，提供了最佳化的設計方法。
並列摘要
Double-gate CMOS modeling techniques for device and circuit simulations are presented. The modeling techniques, including look-up table modeling, compact device modeling, and mixed-mode simulation, have their unique features suitable for evaluating high performance Double-Gate CMOS circuits.
延伸閱讀
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