適用於功率積體電路之準垂直型閘極絕緣雙極性電晶體與接面位障蕭基二極體

Quasi-Vertical IGBTs and JBS Diodes for Power Integral Circuit Applications

陳宏士(Hung-Shih Chen)

指導教授 ： 黃智方

國立清華大學/電機資訊學院/電子工程研究所/碩士(2009年)

摘要

本篇文章提出新穎的準垂直型(quasi-verticcal)閘極絕緣雙極性電晶體(IGBT)與接面位障蕭基二極體(JBS diode)兩種結構。藉由準垂直結構的設計，此兩種元件能夠與其他元件整合達到積體化，適合應用於積體功率電路(power ICs)。透過半導體元件模擬軟體Medici模擬以及採用HV_0.5μm_5/100V_1P3M製程製作元件。經模擬與量測結果指出，結構中有P-Sinker設計的V-IGBT元件，其正向導通能力比相同條件下的L-IGBT與VDMOS好，因此擁有可積體化和低導通電壓降的優點。而接面位障二極體在常溫和溫度變化下的正向導通能力比相同製程和條件下的PN二極體好，導通和截止所需的關閉時間約為200 ns，只有PN二極體的一半，有低導通壓降和關閉快速的優點。

關鍵字

功率元件 ； 切換特性 ； 準垂直型閘極絕緣雙極性電晶體 ； 接面位障蕭基二極體 ； 準垂直型金屬氧化物半導體場效電晶體

並列摘要

This thesis studies two novel structures that have low forward voltages—quasi-vertical IGBT and JBS diode. In addition, by incorporating the quasi-vertical design, the proposed devices are able to be integrated with other devices, very suitable in the application of power ICs. The devices were first designed using the simulator MEDICI and then taped-out using HV_0.5μm_5/100V_1P3M process. The simulation and measurement results indicate that the V-IGBTs with P-Sinker design have better forward capability than that of L-IGBT and VDMOS. At room temperature as well as at elevated temperatures, the proposed JBS diodes have lower forward voltage than that of the PN diodes in the same fabrication process. In terms of the turn-off time, it takes 200 ns for the fast JBS diodes to turn off, only half of the time required by the PN diodes.

參考文獻

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