- 期刊
ANALYSIS OF TEMPERATURE AND DRAIN VOLTAGE DEPENDENCE OF SUBSTRATE CURRENT IN DEEP SUBMICROMETER MOSFET'S
摘要
In this paper, a detailed experimental study of channel length, drain voltage and temperature dependence of substrate current Isub in submicrometer MOSFET's is presented. Impact ionization rate is remarkably increased with decreasing channel length L and go up from 10^(-7) to 6, 7. 10^(-7) when L decrease from 2 to 0.1 lain, this behaviour found expression in a fast increase of the substrate current maximum Isub_(max). Moreover it is observed that contrarily of long channels, low temperature operation is favourable to reduce hot carrier effects in submicrometer MOSFET's and may represent a promising alternative for the improvement of the performances of Si integrated circuits.
延伸閱讀
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