以循序設計方式利用中央和合成設計於薄膜電晶體液晶顯示器之蝕刻製程最佳化研究

隨著科技的發展，電子產品已經融入人們生活的一部分，近年來顯示器的尺寸朝著輕、薄及小型化的演進，使得生產技術受到了挑戰。因此本文以循序設計的中央合成設計以及反應曲面法，應用於薄膜電晶體液晶顯示器前段工程中之蝕刻製程為研究主題，選用藥劑濃度、轉動速度及藥劑溫度三個為影響因子，以蝕刻深度為品質特性，找出最佳化因子的水準組合，以減少不良產品。最終研究顯示，藥劑濃度、機台轉動速度及藥劑溫度的最佳組合參數為藥劑濃度13.786 %、機台之轉動速度為1.867仟轉／分、藥劑溫度為36.59度，改善後的蝕刻深度平均值為14.16025mm，相較於改善前平均值為9.157mm的製程，明顯地接近目標值，並且落於目標值14mm±0.2mm中，實驗驗證此一結果是極為有效。

關鍵字

中央合成設計；反應曲面法；薄膜電晶體液晶顯示器；蝕刻深度；最佳組合參數

並列摘要

With the development of technology, electronic products have been integrated into people's lives. The pursuit of light, thin, and small liquid crystal displays makes the production technology full of challenges. In the research, the sequential design of Central Composite Design and Response Surface Methodology were applied to the etching process of the thin film transistor liquid crystal display with three factors of agent concentration, rotation speed, and agent temperature being considered. The quality characteristic of the research is etching depth and is optimized to search for the optimal parameters of the factors. After the research, the optimal process parameters of agent concentration, rotation speed, and agent temperature are 13.786%, 1.867 Krev/min, and 36.59 degrees respectively. The average value of etching depth is 14.16025mm after improvement compared with the average value of 9.157mm before improvement. The improved process is obviously close to the target value of 14mm±0.2mm.

並列關鍵字

Central composite design ； Response surface methodology ； Thin film transistor liquid crystal display ； Etching process ； Optimal process parameters

國際替代計量

以循序設計方式利用中央和合成設計於薄膜電晶體液晶顯示器之蝕刻製程最佳化研究

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