應用於手提式數位電視接收器之射頻前端電路設計

Design of RF Front-End Circuitsfor DVB-H Receivers

王宏旭(Hung-Hsu Wang)

指導教授 ： 劉深淵

國立臺灣大學/電機資訊學院/電子工程學研究所/碩士(2006年)

https://doi.org/10.6342/NTU.2006.00228

摘要

近年來固定式數位電視(DVB-T)的接收晶片組已成為業界相當熱門的通訊產品。隨著通訊市場的需求，手提式數位電視(DVB-H)將是下個主要的研究課題。為考量手提式裝置的方便性，電池通常為其電源供應的主要方式，所以系統耗電不能太高以延長用戶使用時間。因此我們研究的主要目標為研發一個低電壓低功率消耗的類比射頻接收器前端電路，以符合手提式數位電視的需求。整個系統包括可變增益之低雜訊放大器，混頻器以及基頻可變增益放大器。
首先，我們介紹了一些關於基頻的基礎及常用的接收機架構，並決定採用直接降頻的方式來實現此接收機以及預測各電路所需之規格效能。
而後採用一雜訊抵消及增加轉導的技巧來實現可變增益之低雜訊放大器，此放大器沒有使用電感以節省面積，並且消耗較小的功率。最後實現了一個低功率的混頻器及基頻可變增益放大器，且此放大器可線性調整增益。整個接收機射頻前端電路以CMOS0.18um製程實現，在1.8伏特的供應電壓下，整個前端電路消耗功率小於40毫瓦。

關鍵字

手提式數位電視 ； 射頻前端電路設計

並列摘要

In the recent years, chipsets for DVB-T receivers have become hot products in the industry. According to the requirement on the market, products developed for DVB-H receivers in mobile handsets will be the next research topic. Since batteries are the main power sources of mobile handsets, the power consumption of the products is of primary concern. To achieve this goal, we develop a low-power RF front-end for DVB-H receivers in mobile handsets. The front-end consists of a variable-gain low-noise amplifier, a mixer, and a basedband variable-gain amplifier.
First, we introduce the basic knowledge of RF fundamentals and some frequently used receiver architectures. The direct conversion architecture is chosen and the performance requirements of the constituent blocks are decided.
A variable-gain low-noise amplifier incorporating Gm-boosting and noise-canceling techniques is designed to operate at low power consumption. Monolithic inductor is not required and the area can be greatly saved.
A low power mixer and a basedband variable gain amplifier are designed for frequency downconversion and gain-adjustment, respectively. The gain can be varied linear-in-dB by using a quasi-exponential control method. The RF front-end is implemented in a 0.18μm CMOS technology and consumes less than 40mW from a 1.8V supply.

並列關鍵字

DVB-H ； RF front-end

參考文獻

[1] H. Darabi and A. A. Abidi, “Noise in RF-CMOS Mixers: A Simple Physical Model,” IEEE Journal of Solid State Circuits, vol. 35, pp. 15–25, Jan. 2000.

[2] X. Li, S. Shekhar and D. J. Allostot, “Gm-Boosted Common-Gate LNA and Differential Colpitts VCO/QVCO In 0.18-um CMOS,” IEEE Journal of Solid-State Circuits, vol. 40, pp. 2609 – 2619, Dec. 2005.

[4] H. Darabi and J. Chiu, “A Noise Cancellation Technique in Active RF-CMOS Mixers,” IEEE International Solid-State Circuits Conference, pp. 544-545, Feb. 2005.

[7] F. Bruccoleri, E. A. M. Klumperink and B. Nauta, “Wide-Band CMOS Low-Noise Amplifier Exploiting Thermal Noise Canceling,” IEEE Journal of Solid-State Circuits, vol. 39, pp. 275–282, Feb. 2004.

[8] T. W. Kim, B. Kim, Y. Cho, S. Kim, B. Kim and K. Lee, “Low Power 60dB Gain Range With 0.25 dB Resolution CMOS RF Programmable Gain Amplifier for Dual-Band DAB/T-DMB Tuner IC,” Integrant Technoligies, Inc., Korea, Dept Of EECS, Korea.