- 學位論文
開創性矽晶穿孔製程導入晶圓級發光二極體封裝基板之研究
Innovative Through-Silicon Via Formation Approach for Wafer-Level Packaging Light-Emitting-Diode Sub-mount Application
摘要
矽晶穿孔（TSV）製程為三維積體電路、系統級封裝、晶圓級封裝（WLP）等三維堆疊封裝科技之核心關鍵技術，近年來採用矽晶穿孔技術進行三維堆疊封裝儼然已成為封裝業者發展之主要趨勢。探索技術現況，深反應性離子蝕刻（DRIE）製程小從數微米直至數百微米以上尺寸之矽晶穿孔製作皆能勝任，是目前最廣為半導體業者所採用之矽晶穿孔製程方法。然而，深反應性離子蝕刻製程設備相當昂貴，無形中限制了此蝕刻工藝之應用層面。本論文有兩大研究重點，首先係創新矽晶穿孔製程之研發；接續為創新矽晶穿孔製程導入發光二極體封裝基板（LED sub-mount）應用之分析與驗證。本研究使用灰關聯田口（Grey-Taguchi）方法尋找濕式蝕刻製程之多品質最佳參數，藉由最佳化蝕刻製程移除奈秒雷射製程產生之矽晶缺陷。應用上針對發光二極體封裝基板之散熱性能、基板絕緣電性、高溫可靠度等關鍵特性進行分析與探討。實驗結果顯示灰關聯田口方法可確實找到區域多重品質最佳化參數並有效移除雷射加工產生之矽晶缺陷；採用矽晶穿孔基板作為發光二極體封裝基板能得到較氧化鋁基板優異之散熱性能；創新矽晶穿孔製程導入發光二極體封裝基板應用相較於採奈秒雷射製程製作之基板能提昇623 %之崩潰電壓；晶圓級發光二極體封裝基板具備優異之高溫可靠度特性。本文提出之創新矽晶穿孔製程具備有，較低加工成本、高加工效率、優異加工品質等適合半導體相關業者將製程導入量產之關鍵特性。而晶圓級發光二極體封裝基板之關鍵特性與可靠度結果闡述了晶圓級發光二極體封裝基板取代陶瓷封裝基板之潛在機會。
並列摘要
Through-silicon via (TSV) is an emerging technology for three-dimensional integrated circuit, system-in-packaging, and wafer-level packaging (WLP) applications. Among several available TSV formation methods, Bosch deep reactive ion etching (DRIE) is widely used because it enables the fabrication of TSVs with almost any diameter, from the submicrometer level to hundreds of micrometers. However, the high cost of Bosch DRIE makes it uneconomical for industrial production. This dissertation is commenced with the development of innovative TSV formation approach, and then, the feasibility of the proposed new drilling strategy adopted in a practical light-emitting-diode (LED) sub-mount application is demonstrated. Here, an effective method for the optimization of multiple performance characteristics of wet chemical etching process to remove TSV defects based on Grey-Taguchi method is introduced. In the LED sub-mount application study, the thermal dissipation performance, dielectric breakdown voltage based on 1-μm-thick silicon dioxide dielectric layer, and the high-temperature reliability of silicon LED sub-mount are investigated. Experimental results confirm the efficacy of the multiple performance optimization method based on Grey-Taguchi method as well as demonstrating that the combined approach effectively eliminates the unwanted material formed by nanosecond (ns) laser pulses. The results also reveal that the silicon LED sub-mount shows superior thermal dissipation performance, the proposed innovative TSV formation approach represents an improvement of 623 % dielectric breakdown voltage over conventional ns laser drilling method with the same oxidation process condition, and the WLP LED sub-mount contains well high-temperature reliability feature. As a result, the proposed new TSV formation approach affords superior TSV quality, higher TSV throughput, and lower processing cost than Bosch DRIE. These advantages could provide the necessary impetus for rapid commercialization of the several high-density fabrication methodologies that depend on TSVs. Through this work, it has been demonstrated that with the proposed new approach, it is feasible to achieve a cost-effective silicon LED sub-mount for replacing the conventional ceramic sub-mounts in high brightness LED package application.
參考文獻
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