本研究係一種結合CMOS製程晶圓級製造奈米液滴壓電噴嘴頭的方法,主要是以CMOS製程設計金屬遮罩層及氧化層,以CMOS MEMS製造次微米級噴嘴孔以及噴墨頭腔體流道;CMOS MEMS製程作出潛埋式回流抑制微流道、壓力腔體以及入墨腔體,完成晶片腔體流道及噴孔整體,透過濺鍍矽基晶圓表面加工處理,使噴嘴孔表面產生非濕潤性(non-wettable)材質,破壞表面張力輔助液滴射出。最後將晶圓級鎳震動膜與晶圓級壓電厚膜對準黏接至矽基晶圓上,完成各個獨立的奈米液滴壓電噴嘴頭結構。本發明可同時加入CMOS驅動波型產生器之電路,以達到單晶片整合系統(one chip integrated system) 之奈米液滴壓電噴嘴頭。另外針對奈米液滴射出時產生高壓回流影響射出之現象,設計一新型防回流微流道機制,透過此設計提昇奈米液滴射出大小的可操控性、有效射出率。
This reach disclosed a method to manufacture the nano inkjet head using wafer-level fabrication process. First, use CMOS process technology on the wafer to make sub-micro jet hole, cavities, and micro-channel on the same side of the wafer. Next etch away the silicon-dioxide to get nanojet hole, cavities and micro-channel. Sputter non-wettable material around the nanojet hole to help nano-liquid ejection easily. Finally, align and bond nickel vibration membrane and piezoelectric thick film on the said silicon wafer to get the complete PZT nano-inkjet print head structure. Furthermore, the driving wave generator circuits can be designed simultaneously with the said nanojet and ring heater. Thus, a system-on-chip package nanojet print head can be obtained. Also a new refill-proof design of the said micro-channel is disclosed to aid stabilizing every ink ejection process.