- 學位論文
12吋DRAM廠耗能分析及能源消耗對全球暖化影響之研究
A Study on Energy Consumption and Its Impact on Global Warming for 12-inch DRAM Fabs in Taiwan
摘要
台灣工業部門的產業結構以電子產業為主，但此產業頗為耗電，如其他產業用電量年成長率為4~5％，電子業卻高達30％。2007年全球DRAM市佔率台灣擠身前進至全球前3名，其中12吋晶圓產能台灣更佔全球第一位。加上「京都議定書」生效後，全球環境保護聲浪沸騰，地球氣候變遷議題受到廣泛的重視，節能議題日趨重要。 本研究目的有二，其一是針對國內12吋DRAM廠進行能耗調查，建立單位產品耗能指標並且比較分析不同世代DRAM廠之能源耗用。再者由生命週期評估觀點出發，探討DRAM廠的能源消耗，對全球暖化的影響。 此次研究產業範圍以國內12吋DRAM廠作能耗調查，計算廠商在製程100%產能時的單位耗能。綜合各廠資料結果顯示2007年台灣12吋DRAM廠耗能指標平均值分別為0.74 kWh/cm2及0.027 kWh/UOP。研究結果與ITRS (2008) [32] (i.e., 0.8 kWh/cm2-wafer area in 2007) 接近，而與ISMI (2008) [12] (i.e., 2.133 kWh/cm2-wafer area in 2007) 調查結果是有差異的，主要原因為ISMI 2007年產能利用率不高UOP偏低導致；另一研究指標“晶圓生產空間使用指標”( Space Utilization Index，SUI) ，12吋DRAM廠亦因生產機台效率改善，SUI值明顯高於6吋、8吋廠。 另外由生命週期評估觀點出發，使用Simapro 5.0軟體Eco-indicator 95衝擊模式下，就『特徵化』結果而言，DRAM產業在製造階段的能源消耗對全球暖化衝擊影響，其每單位晶圓面積(1/cm2)使用之能源產生的溫室氣體 - 1999年 200mm wafer為 0.601 kg CO2，2007年 300mm wafer為 0.367 kg CO2。相較於1999年，2007年製造每單位晶圓面積(1/cm2)所使用之能源產生的溫室氣體排放減少0.234 kg CO2。
並列摘要
The structure of industry sector in Taiwan focused on electronic industry primarily. However, electronic industry is an energy-intensive industry. For example, the annual growth rate of electricity consumption of other industry was 4~5%, the electronic industry was 30% in the past few years. The market-share of Taiwan DRAM fabs, majorly 300 mm Wafer fabs, was ranked top three in the world in 2007. As the “Kyoto Protocol” becomes effective, the global environment protection voice ebullient and the earth climatic change subject receives much attention. The objects of this thesis include two tasks. First, to elaborate the specific electric power uses of the four 300-mm DRAM fabs selected, and then compare them to their 300-mm, 200-mm, and 150-mm counterparts compiled from previous studies. Second, explore the influence of the energy consumption of these DRAM fabs on global warming. The first part of this thesis characterized electrical energy use for four major 300-mm DRAM wafer fabs in Taiwan, including energy use by overall fab, facility systems, and subsystems through field data collection and analysis. Energy performance and wafer production of the DRAM fabs making wafers of different sizes and different locations base upon additional data compiling and literature research, were compared. The average of the normalized electric power consumption in Taiwan’s 300-mm DRAM fabs in this study was 0.0272 kWh/UOP and 0.743 kWh/cm2-wafer area, meeting the International Technology Roadmap for Semiconductors (i.e., 0.8 kWh/cm2-wafer area in 2007), while the other 300-mm DRAM fabs worldwide that were surveyed by ISMI exhibited lower UOP values likely due to a combination of factors such as low capacity utilization. All the 300-mm DRAM fabs included in comparisons have exhibited significantly higher space utilization efficiency along with similarly higher power density, while demonstrating significantly higher energy efficiency in wafer production than their 150-mm or 200-mm predecessors. Moreover, embarking through the viewpoint of Life Cycle Assessment (LCA), by using the Simapro 5.0 software under Eco-indicator 95 impact patterns, the DRAM industry in manufacturing stage's energy consumption to the global warming impact influence, greenhouse gas which - 1999 energy of its each unit wafer area (1/cm2) use produced 200mm wafer is 0.601 kg CO2, 2007 year 300mm wafer is 0.367 kg CO2, as to the “characterization” of the simulated result. Compared the data of 1999, the greenhouse gas emissions due to energy consumption of unit wafer area (1/cm2) reduces 0.234 kg of CO2 in 2007.