以超音波噴霧熱解法成長摻銻氧化鋅薄膜

Sb-doped p-type ZnO thin films fabricated by ultrasonic spray pyrolysis

周志學(Chih-Hsuen Chou)

指導教授 ： 王耀德

國立臺北科技大學/電資學院/光電工程系研究所/碩士(2010年)

摘要

本論文利用超音波噴霧系統與高溫爐熱退火架構在藍寶石基板上製備摻銻之氧化鋅(SZO)薄膜。然後其薄膜之晶體結構與電性分別利用X-Ray繞射儀、SEM與霍爾量測儀器去量測。從XRD分析中發現氧化鋅薄膜在(002)方向具有良好的結晶性，具有良好的單晶結構。而且隨著摻雜濃度的提升，(002)方向的繞射峰值會向低角度位移，說明摻雜物是以取代的方式進入氧化鋅；從霍爾量測分析中顯示，在通氮氣且抽真空的環境下退火，其電性會比退火前來的好。而在溫度500℃沉積，接著於充滿氮氣及壓力為1torr的環境中以650℃退火1小時，摻雜濃度為1.5at.%時， SZO薄膜形成p型半導體且具有較良好之電性。此時電阻率、載子濃度與遷移率分別為0.03(Ω-cm)、1.27×1019(cm-3)、19.26(cm2/Vs)。因此，本實驗利用超音波噴霧系統製作摻雜銻之氧化鋅薄膜，成功摻雜出具有良好電性、高載子濃度的P型氧化鋅薄膜。

關鍵字

超音波噴霧熱解法 ； p-type ZnO ； Sb-doped 氧化鋅薄膜

並列摘要

We investigated the Sb-doping effects on ZnO thin films by using ultrasonic spray pyrolysis and post thermal annealing. The structural and electronic properties of the thin films were measured by X-ray diffraction, SEM (scanning electron microscope) and Hall effect measurement. Results of X-ray diffraction reveal that the SZO thin films had good crystallinity on the c-axis direction, and the Sb atoms were successfully occupied the zinc sites, and made the (002) peak shift to lower angle value. The Hall effect measurement shows that the annealing can increase conductivity of SZO. And in the condition of 1.5% Sb-doped films deposited at temperature of 500℃, and annealed for 1 hour at 650℃ in the N2 and 1torr, SZO was p-type semiconductor and had better conductivity. The films showed a resistivity of 0.03(Ω-cm), hole concentration of 1.27×1019(cm-3), and mobility of 19.26(cm2/Vs). In this study, the Sb-doped p-type ZnO thin films were successfully grown by ultrasonic spray pyrolysis with high carrier concentration, low resistivity.

並列關鍵字

p-type ZnO ； Sb-doped ZnO ； Ultrasonic Spray Pyrolysis

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