C-Band與K-Band射頻功率放大器設計

Design of C-Band and K-Band Radio-Frequency Power Amplifiers

柯吉鴻(JI-HONG KE)

指導教授 ： 王多柏

國立臺北科技大學/電資學院/電腦與通訊研究所/碩士(2012年)

摘要

本論文描述2個應用於C-band與1個應用於K-band之射頻功率放大器電路設計，使用TSMC 0.18μm 1P6M CMOS 製程來實現，所實現電路包括一個操作在5.8 GHz 兩級cascode結構之A類功率放大器，一個操作在5.8 GHz使用Lumped元件型式的Wilkinson功率合成器之功率放大器，一個操作在22.2 GHz使用交叉耦合對(Cross-Coupled Pair)架構的功率放大器。
各電路之模擬與量測特性如下：5.8 GHz 兩級cascode結構之A類功率放大器量測的結果得到增益為23.6 dB、輸入返回損耗為-11.3 dB、輸出返回損耗為-4.9dB、輸出1dB增益壓縮點為16.6 dBm、飽和輸出功率為21.4 dBm、功率附加效率為39.6 %。採用Lumped元件型式的Wilkinson功率合成器之功率放大器量測的結果得到增益為15.72 dB、輸入返回損耗為-19.82 dB、輸出返回損耗為-4.58 dB、輸出1dB增益壓縮點為7.22 dBm、飽和輸出功率為11.39 dBm、功率附加效率為3.78%。22.2 GHz使用交叉耦合對(Cross-Coupled Pair)架構的功率放大器模擬的結果得到增益為20.6 dB、輸入返回損耗為-7.08 dB、輸出返回損耗為-18.78 dB、輸出1 dB增益壓縮點為15.4 dBm、飽和輸出功率為19.8 dBm、功率附加效率為4.9 %。

關鍵字

功率放大器 ； Wilkinson功率合成器 ； 交叉耦合對

並列摘要

This thesis proposed two designs of PA which was applied to C-band and one that was applied to K-band. All of them were implemented by TSMC 0.18μm 1P6M CMOS manufacture process. The first, a Class-A PA, was composed by two-stage cascode structure. The second PA was achieved by Wilkinson power divider which applied Lumped-component form. The implementations of above two PAs were both operated at 5.8GHz. The last one was a PA with cross-coupled pair structure operating at 24GHz.
The following are the simulation and measurement of each PA. For measurement outcome of the first PA, the gain is 23.6dB, the input return loss is -11.3dB, the output return loss is -4.9dB, the OP1dB is 16.6dBm, the Psat is 21.4dBm and the PAE gets 39.6%. The measurement outcome of the second PA: 15.72dB for the gain, -19.82 dB for the input return loss, -4.58dB for the output return loss, 7.22dBm for the OP1dB, 11.39 dBm for the Psat and 3.78% for the PAE. The simulation outcome of the third PA: The gain, input return loss, output return loss, OP1dB, Psat and PAE of the last PA are 20.6dB, -7.08dB, -18.78dB, 15.4dBm, 19.8dBm and 4.9%, respectively.

並列關鍵字

Power Amplifier ； Wilkinson Power Combiner ； Cross-Coupled Pair

參考文獻

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