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  • 學位論文

自我催化VLS機制成長ZnO奈米線及其應用於氣體感測器之分析

ZnO Nano-wire prepared by Self-catalysed VLS Method and Its Application on Gas Sensor

指導教授 : 王錫福

摘要


本研究是利用自我催化(self-catalysted)成長之氣態—液態—固態方法(VLS method),藉由ZnO:Ga/SiO2/Si基板上,成長出品質良好之單晶、垂直氧化鋅奈米線(ZnO nanowires)。氧化鋅奈米線成長於爐管內,成長反應過程中通入的氬氣與氧氣,其流量分別為54和0.8 sccm,藉由氣體固定流量的條件下,來改變鋅粉量或溫度變化,探討這兩個條件對於氧化鋅奈米線成長所產生的影響。實驗條件為改變鋅蒸氣源之鋅粉量,其變化分別為0.1 g、0.15 g、0.2 g、0.25 g、0.3 g共五組,所選用的成長溫度變化分別為600℃、650℃、700℃、750℃、800℃共五組,單一個實驗只使用一組變數,並將結果進行場發射掃瞄式電子顯微鏡(FESEM)、X-ray繞射分析儀(XRD)和陰極激發光光譜儀(CL)等特性分析。另外將所成長之試片,應用於CO氣體感測效應,並將其中感測靈敏度最好的基板,進行其他氣體酒精、甲烷、丁烷等的感測效應量測。實驗結果顯示氧化鋅奈米線的成長條件變化,對於其缺陷有其相關性,也會影響其氣體的感測條件。本文中將對鋅粉量變化或成長溫度變化,做深入分析與探討。

關鍵字

氣體感測效應

並列摘要


Vertical single-crystal ZnO nanowires with uniform diameter and uniform length were selectively grown on ZnO:Ga/SiO2/Si glass templates by a self-catalyzed vapor–liquid–solid process without any metal catalyst. The ZnO nanowires were grown within the furnace. During the growing process, The flows of Argon and Oxygen were applied into furnace with 54 and 0.8 sccm, respectively. Under the fixed gas flow rate, the effects for ZnO nanowires growth by changing the amount of Zn powder and growing temperature are discussed in this work. The experiments for various amounts of 99.9% zinc metal powder (0.1, 0.15, 0.2, 0.25 and 0.3 g) and different growing temperatures (600℃, 650℃, 700℃, 750℃, and 800℃) were used to grow ZnO nanowires. Each sample was examined by FESEM, XRD, and CL analyses, then used it as a Gas sensing device. CO gas was also introduced upon each kind of samples. The most sensitive sample to CO gas was selected to proceed other gas sensing tests like Alcohol, CH4, and Butane. The results indicate that different growing conditions would impact on the defects of the ZnO nanowire and, in turn, its gas sensing characteristic.

並列關鍵字

Gas sensing

參考文獻


[1]C. Weisbuch, H. Benisty and R. Houdrė, “Overview of fundamentals and applications of electrons, excitons and photons in confined structures”, J. Lumin. vol. 85,nol. 4, 2000, pp. 271-293.
[4]F. C. Frank, “The Influence of Dislocations on crystal Growth”, Discussions Faraday Soc. vol. 5, 1949, pp. 48-54.
[5]R.S.Wagner, W.C.Ellis, “Vapor-Liquid-Solid Mechanism of Single Crystal Growth”, Appl. Phys. vol. 4, 1964, pp.89.
[6]M. H. Huang , Y. Wu , H. Feick , N. Tran , E. Weber , P. Yang, “CatalyticGrowth of Zinc Oxide Nanowires by Vapor Transport”, Advanced Materials, vol. 13,nol. 2, 2000, pp. 113-116.
[7]JD Meindl, Q. Chen, and JA Davis, “Limits on silicon nanoelectronics for terascale integration”, Science, vol. 293, 2001, pp. 2044.

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