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  • 學位論文

應用於超高頻射頻感應器之低壓降線性穩壓器之設計與分析

Analysis and Design of the Low Dropout Voltage Regulator for RFID Sensor

指導教授 : 吳紹懋
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摘要


本論文實現適用於超高頻被動式無線射頻辨識系統前端電路之線性穩壓器,將天線所接收到的射頻功率先經由RF-DC 整流器轉換成直流電壓,再利用此穩壓器產生穩定電壓,供應系統使用。在一般的穩壓器中,負載電流大小及輸出電容值為主要影響系統穩定度的因素。因此,本篇論文所設計的穩壓器具負載調節功能來提升系統的穩定度。同時,並可提供1.25伏特的穩定電壓供給系統電路使用。本研究詳細的分析電路架構、小訊號分析。最後使用TSMC 0.18um CMOS 1P6M的標準製程實現,實驗與量測結果為輸出穩壓為1.2伏特,線性變化率為4.27%/V,負載調節為1.3%/V。整個晶片大小為0.495x 0.875.5 mm2 ,其能量損耗為9.1μW。

並列摘要


In this thesis proposed is an LDO regulator for a passive UHF RFID front-end system. The RF power received by the antenna is first converted into DC voltage by the RF-DC converter; the proposed LDO regulator then generates stable voltage for the systems. Detail analyses of the architecture and small signal model are studied in the thesis. The system is designed and implemented in the standard TSMC 0.18um CMOS 1P6M process. the experimental results show that the output voltage is 1.2 volts, the line regulation is 4.27%/V, and the load regulation is 1.3%/V. The chip size is 0.495 x 0.875 mm2, and the total power consumption is 9.1μW.

並列關鍵字

RFID sensor LDO

參考文獻


[3] F. S. Wai and K. T. Mok, Design of an Ultra-low Power Voltage Regulator for RFID Applications, 2007.
[5] C. C. Wang and C. C. Huang, “A Linear LDO Regulator with Modified NMCF Frequency Compensation Independent of Off-chip Capacitor and ESR,” Analog Integrated Circuits and Signal Process, pp. 239-244, Oct. 2009.
[6] V. Gupta and G. A. Rincon-Mora, “A 5mA 0.6μm CMOS Miller-Compensated LDO Regulator with -27dB Worst Case Power Supply Rejection Using 60pF of On-Chip Capacitance,” IEEE International Solid-State Circuit Conference, San Francisco, CA, Feb. 2007.
[7] R. J. Milliken and J. Silva, and E. Sanchez-Sinencio, “Full On Chip CMOS Low-Dropout Voltage Regulator,” IEEE Transactions on Circuits and Systems, vol. 54, no. 9, pp. 1879-1890, Sep. 2007.
[9] G. Balachandran, and R. Barnett, “A 110 nA Voltage Regulator System With Dynamic Bandwidth Boosting for RFID Systems,” IEEE Journal of Solid-State Circuits, vol. 41, no. 9, pp. 2019-2028, Sep. 2006.

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