利用氮化矽阻障層進行濕式蝕刻圖案化藍寶石基板技術之研究

Study of Wet Etching at a Patterned Sapphire Substrate by Using a SiNx Barrier Layer

黃家揚(Jia-Yang Huang)

指導教授 ： 陳念波

元智大學/電機通訊學院/光電工程學系/碩士(2011年)

摘要

本研究利用氮化矽 (SiNx) 材料來取代目前所廣為使用的氧化矽 (SiO2) 來作為阻障層形成圖形化藍寶石基板 (patterned sapphire substrate, PSS)。經由蝕刻後，得到了圖形深度為1181 nm的圖形化藍寶石基板，且圖形的最上層保有一層氮化矽。氮化矽折射率為2.05，而藍寶石基板折射率為1.78，氮化鎵折射率為2.4，因為氮化矽的折射率介於氮化鎵和藍寶石基板之間，所以氮化矽可以用來當漸變折射率的材料，但氧化矽折射率為1.42，因此無法當成漸變折射率材料。

關鍵字

圖案化藍寶石基板 ； 氮化矽

並列摘要

In this study, silicon nitride is used to replace silicon dioxide as a barrier to form a patterned sapphire substrate. By etching, we obtained the result of a patterned sapphire substrate whose depth is 1181 nm. Besides, there is a fine layer of silicon nitride on the top of the patterns. The refractive index of silicon nitride is 2.05 while that of sapphire is 1.78, and 2.4 for the GaN. Since the refractive index of silicon nitride falls between the GaN and sapphire substrates, silicon nitride can be used as the material for gradient refractive index. However, the refractive index of silicon dioxide is just 1.42, so it is not an useful material for gradient refractive index.

並列關鍵字

pattern sapphire substrate ； SiNx

參考文獻

[1]Takashi Matsuoka, Hiroshi Okamoto, Masashi Nakao, Hiroshi Harima and Eiji Kurimoto, “Optical bandgap energy of wurtzite InN,” Appl. Phys. Lett., vol. 81, pp. 1246–1248, 2002

[4]Y. P. Varshni, “Temperature dependence of the energy gap in semiconductors,” Physica, vol. 34, pp. 149–154, 1967

[5]D. A. B. Miller, D. S. Chemla, and T. C. Damen, “Band-edge electroabsorption in quantum well structures: The quantum-confined stark effect,” Phys. Rev. Lett., vol. 53, pp. 2173–2176, 1984

[6]A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, “Nonpolar InGaN/GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak,” Appl. Phys. Lett., vol. 85, pp. 5143–5145, 2004

[7]A. Chakraborty, B. A. Haskell, S. Keller, J. S. Speck, S. P. Denbaars, S. Nakamura and U. K. Mishra, “Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates, ” Jpn. J. Appl. Phys., Part 2, vol. 44, p. L173, 2005