應用在RRAM記憶體之氧化鋅薄膜及其電極材料開發

Effect of electrode material on the resistance switching of ZnO film for RRAM applications

王韋婷(Wei-Ting Wang)

指導教授 ： 吳泰伯

國立清華大學/工學院/材料科學工程學系/碩士(2009年)

https://doi.org/10.6843/NTHU.2009.00402

摘要

In this thesis, we successfully fabricated the highly (002) oriented ZnO thin films of 50 nm thick were prepared on Pt/Ti/SiO2/Si substrate by rf magnetron sputtering at room temperature. Various top electrodes were deposited on ZnO films and electrode material dependence on resistance switching characteristic was evaluated with structure of TE/ZnO/Pt.
Different electrode materials selected in this thesis were used to elucidate that the role of electrode plays in resistive switching behavior. Moreover, the metal electrode chosen in this thesis is based on work function of metal and free energy of metal oxide formation.
For ZnO films, Pt/ZnO/Pt, Cr/ZnO/Pt, Al/ZnO/Pt, Mo/ZnO/Pt devices show reproducible bi-stable resistance switching behavior. Ratio of HRS to LRS is about 20~50 except Mo/ZnO/Pt device. According to the variation of resistive switching parameters, Cr/ZnO/Pt device exhibited better resistance switching properties in comparison with Pt/ZnO/Pt, Al/ZnO/Pt, and Mo/ZnO/Pt devices.

關鍵字

電阻式記憶體 ； 氧化鋅 ； 電極材料

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