電荷在抹除非重疊離子植入金氧半場效電晶體之分析

由於可攜式產品的普及，非揮發性記憶體在半導體記憶元件中所扮演的角色愈來愈重要。隨著半導體製程技術的精進，半導體非揮發性記憶體亦逐年在進步。然而，隨著元件的微縮，具功率消耗低、元件密度高、操作速度快、且相容於CMOS製程等特色的記憶元件將是未來發展的趨勢。本論文以電荷在抹除非重疊離子植入金氧半場效電晶體之分析做為研究主題，此記憶元件的抹除係利用帶對帶穿遂效應引發熱電洞的注入，並以幸運電子模型為理論基礎推算熱電洞的注入機率。並設計兩個實驗去驗證其模型的準確性，觀察不同的閘極與汲極偏壓對元件進行抹除之操作之影響，經由詳細的實驗量測，配合理論推算及元件模擬的相互比對，可成功計算出其熱電洞注入機率，並確認該元件抹除模型的準確性。

關鍵字

熱電洞注入；非揮發性記憶體；帶對帶穿遂效應

並列摘要

Non-volatile memories play more and more important roles with the emergence of the portable microelectronic products. The non-volatile semiconductor memories have rapidly progressed as the semiconductor technologies advance. The memory devices having low power consumption, high density, high-speed operation, and full compatibility with the standard CMOS processing will be the future development trend in non-volatile memories. This work explores the erasing charge injection in Non-overlapped Implantation (NOI) MOSFETs. The erase operation of the NOI nMOSFET is utilized by band-to-band induced hot hole injection, and studied by the hot hole injection probability based on modified Lucky electron model. Two experiments are designed to prove the probability accuracy, and confirm erase operation influence under difference drain and gate biases of the NOI device. It has been successful to confirm the hot hole injection probability by cross examined between these two experiments, including device simulation and theoretical deduction.

並列關鍵字

Non-volatile memory(NVM) ； Band-to-band tunneling ； hot hole injection

參考文獻

Chapter 1

[1-5] B. Eitan, P. Pavan, I. Bloom, E. Aloni, A. Frommer, and D. Finzi, ”NROM: A novel localized trapping, two-bit nonvolatile memory cell,” IEEE Electron Device Letters, vol. 21, pp.543-545, Nov. 2000.

[1-6] I. Bloom, P. Pavan and B. Eitan, “NROMTM-a new technology for nonvolatile memory products”, Solid-State Electronics, vol.46, no.7, pp.1753-1763, 2002.

[2-2] W. D. Brown, and J. E. Brewer, “Nonvolatile Semiconductor Memory Technology”, IEEE Press, 1998.

[2-4] C. Y. Chan, S. M. Sze, “ULSI Devices”, John Wiley & Sons, pp. 275, 2000.

國際替代計量

電荷在抹除非重疊離子植入金氧半場效電晶體之分析

未授權

主題瀏覽