以常壓式有機金屬化學氣相沉積法成長摻雜砷之氧化鋅薄膜特性研究

Characterizations of As-doped ZnO films grown on Si substrates by atmospheric pressure metal-organic chemical vapor deposition

王凱正(Kai-Cheng Wang)

指導教授 ： 廖森茂

中原大學/工學院/電子工程研究所/碩士(2010年)

https://doi.org/10.6840/cycu201000375

摘要

以常壓式有機金屬化學氣相沉積法在Si(111)基板上成長摻雜砷的氧化鋅薄膜，鋅與氧的來源分別為二乙基鋅以及水蒸氣，三氫化砷則是摻雜砷的來源。為了研究回火溫度及環境對摻雜砷之氧化鋅薄膜的影響，我們在二乙基鋅或水蒸氣的環境下進行回火，並且控制回火溫度為550°C 到750°C 時間為二十五分鐘。透過X-ray繞射(XRD) 分析摻雜砷之氧化鋅薄膜的從優取向為(101)，場發射掃描式電子顯微鏡(FE-SEM)分析薄膜的表面結構與厚度。霍爾(Hall)與光激螢光(PL)量測顯示出薄膜的電性與光特性。此外，我們使用兩種回火的機制；一是在的二乙基鋅環境下回火希望砷去填補氧的空缺(AsO)，二則是在的水蒸氣環境下回火達到砷填補鋅的空缺(AsZn)。在水蒸氣環境下回火550°C跟750°C，我們發現了P型氧化鋅，並且電洞濃度為2.651×1017 跟1.782×1018 cm-3，遷移率為10.08和5.402 cm2/Vs，電阻率為2.368和0.6485 Ωcm。另外在P型氧化鋅當中發現施體與受體的復合發光，並且我們計算有關砷所造成的受體束縛能其值近似AsZn-2VZn。

關鍵字

化學氣相沉積法 ； 氧化鋅 ； 砷摻雜

並列摘要

As-doped zinc oxide (ZnO:As) films were grown on Si(111) substrates by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) using diethylzinc and water vapor as reactant gases and AsH3 as an p-type dopant gas. In order to investigate the effect of annealing temperature on grown films, the specimens for comparison were annealed in H2O vapor or DEZn atmosphere of insitu thermal annealing chamber with various annealing temperatures for 25 minutes ranging from 550 to 750 °C. The crystalline structure of the As-doped ZnO thin films was analysis by powder x-ray diffraction (XRD) with a predominant orientation to (101). The surface morphology and thickness of ZnO films were examined by a scanning electron microscope (SEM). Hall and photoluminescence (PL) measurements showed that the electrical and optical properties of ZnO films. Therefore, we adopt the Zn-rich DEZn in flow rate 2.0031µmol/min or O-rich H2O vapor rate in 18.28µmol/min under annealing condition with AsH3 flow rate of 124 or 31µmol/min in our experiment and expect to support the formation of AsO or AsZn . The ZnO films annealed at temperature of 550°C and 750°C in H2O vapor atmosphere, they are shown as p-type conductivity with hole concentration of 2.651×1017 and 1.782×1018 cm-3, the Hall mobility of 10.08 and 5.402 cm2/Vs, the resistivity of 2.368 and 0.6485 Ωcm. Distinctly recombination of donor acceptor pair (DAP) were observed from the p-type ZnO films. The calculated arsenic related acceptor binding energy is nearly consistent with that of AsZn-2VZn acceptor complex.

並列關鍵字

MOCVD ； As-doped ； ZnO

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