本文為設計一個無電阻的CMOS帶差參考電壓電路,以反函數的技巧及電流鏡比例的方式,使用MOSFET取代電阻,在廣泛的溫度範圍,且帶有不穩定之直流訊號供應電源之情況下,仍能夠不受電源電壓以及溫度變化影響。本文電路架構包含一個CMOS轉導運算放大器、偏壓電路、啟動電路及一個帶差參考電壓電路。此電路利用雙載子接面電晶體中的基極-射極電壓(V_EB)為一負溫度係數電壓,跨阻差動對電晶體之源極-閘極電壓差(∆V_SG)正比於流經兩不同電流密度之雙載子接面電晶體的基極-射極電壓差(∆V_EB)為正溫度係數電壓,再透過將正溫度係數電壓乘上K倍與負溫度係數電壓相加,來得到一個與溫度不相關的穩定直流參考電壓。 本文利用台積電TSMC 0.18um 1P6M製程,輸入電壓為1.8伏特,在攝氏-40至125度下,輸出電壓為1.2V±50mV,溫度係數96.4ppm/℃,功率消耗0.8279mW。本文將致力於減少晶片面積及更廣的溫度範圍。 關鍵詞: 帶差參考電壓、互補式金屬氧化物半導體、無電阻、溫度係數
This paper proposes a CMOS bandgap voltage reference (BGR) circuit without using resistors, which uses the inverse function [7] technique and current mirrors replacing resistors. This circuit is not affected by power supply voltage and the temperature change in wide temperature range with an unstable DC signal power supply. The architecture of this paper, which is composed of a CMOS operational transconductance amplifier (OTA), bias circuit, start-up circuit, and bandgap core. This circuit use V_EB as complementary to absolute temperature (CTAT), and the voltage of the transresistor differential stage (∆V_SG) proportional to the voltage between two bipolar transistors operating at different current densities (∆V_EB) as proportional to absolute temperature (PTAT). To get a stable DC reference voltage, which is independent of temperature, we can add the V_CTAT and the V_PTAT scaled by K together. This paper has been fabricated in TSMC 0.18um 1P6M process. Measured the output voltage (V_REF) is 1.2V±50mV at -40℃~125℃, the temperature coefficient is 96.4ppm/℃, and power consumption is 0.8279mW. The proposed design focuses on reducing the chip area and having wider temperature range. Keywords: Bandgap voltage reference (BGR), CMOS, resistorless, temperature coefficient