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  • 學位論文

以微波電漿製備超疏水及疏油薄膜於平坦基材之研究

Fabrications of Super-Hydrophobic and Oleophobic Films on Smooth Substrate by Microwave Plasma

指導教授 : 魏大欽
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摘要


本研究利用四氟甲烷(CF4)與八氟環丁烷(C4F8)混合氣體電漿進行表面鍍膜,提高基材之疏水及疏油特性,探討電漿操作壓力、改質時間、基材擺放位置、基材種類等參數對基材表面疏水及疏油性質的影響。並利用WCA、SEM、AFM、XPS、FTIR等儀器分析表面物理形態與化學組成之變化,搭配電漿放射光譜儀(OES)分析電漿中物種濃度的變化。 研究以微波電漿對玻璃基材進行表面改質,發現改質後表面具有超疏水(~160°)及疏油 (~ 144°) 特性。由FTIR分析中可發現電漿沉積膜有大量之CF2鍵結,再經由SEM及AFM中發現在超疏水之表面會有片狀之結構且粗糙度約25 nm左右,因此推斷表面有超疏水及疏油現象是由於氟碳官能基的鍵結以及表面粗糙度的形成有關。 研究中發現降低CF4/C4F8的進氣流量比會使沉積膜表面之片狀結構消失,而接觸角也會由原本的160°降低至120°左右,顯示表面需有片狀結構將水滴撐起以達到超疏水之要求;最後改變沉積基材,以相同電漿製程參數於銅片、PS以及PP上沉積氟碳膜,以SEM觀察得知,三種不同基材其沉積膜皆具有相似之片狀結構,當PS及PP經由電漿改質後表面不但有超疏水之現象且其透明度良好。

並列摘要


In this study, the super-hydrophobic fluorocarbon films were prepared by mixed-gas plasma of C4F8 and CF4. The plasma diagnostics (OES) and surface analysis (WCA, FE-SEM, XPS, AFM and FTIR) were used to elucidate the process-structure-property relationship of fluorocarbon coatings on the glass substrate. The results revealed that placement of substrates, operating pressure, depositing time, and mixed gas flow ratio (C4F8/CF4) could control the relative concentrations of free radicals and the resulting surface topography. FE-SEM and XPS analysis indicated that the films deposited at certain positions possess special wall-like structure, resulting in not only roughed but also hydrophobic surfaces. To further study correlation between surface roughness and water contact angle measurement, both Wenzel and Cassie-Baxter models were used. The roughness factor of super-hydrophobic film was about 1.41 and surface solid fraction was 0.09, resulting in a very low contact angle hysteresis. As revealed by XPS analysis, the super-hydrophobic wall-like film has a fluorine/carbon (F/C) ratio about 2.0, but decreasing CF4/C4F8 ratio the fluorine/carbon (F/C) ratio of deposited films was also decreased and the special wall-like structure disappeared. Finally, we successfully deposited transparent super-hydrophobic fluorocarbon wall-like film onto different substrate such as Cu, PS, and PC.

參考文獻


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