以反應燒結法製備CaCu3Ti4O12介電陶瓷

Preparation of CaCu3Ti4O12 Dielectric Ceramics by Reaction-Sintering Process

張劭暉(Shao-Huei Jhang)

指導教授 ： 劉依政

崑山科技大學/工程學院/電子工程研究所/碩士(2011年)

https://doi.org/10.6828/KSU.2011.00054

摘要

本論文以反應燒結法製備CaCu3Ti4O12(CCTO)介電陶瓷，並探討摻雜Nb對生成相、微結構及特性之影響。經2小時燒結即可得到單一相之CCTO陶瓷，在1120oC燒結4小時可獲得最佳密度值為4.9 g/cm3，收縮率為16.72%。在1120oC燒結6小時之試片在30oC最大介電常數(εr)為7450 (30oC，100kHz)，介電損失(tanδ)為0.1 (30oC，100kHz)，介電常數溫度係數(τε)為0.17 %/oC(100kHz)。CaCu3Ti4-xNbxO12+x/2陶瓷其主要生成相與CCTO一致，並無二次相生成。x=0.15時在1130oC燒結持溫6小時有最大密度4.9g/cm3，收縮率為17.36%。x=0.15時在1130oC燒結6小時有最大介電常數8695(30oC，100kHz)。x=0.02時在1110oC燒結2小時有最低介電損失為0.016 (30oC，100kHz)。x=0.02時在1110oC燒結6小時有最低介電常數溫度係數為0.02 %/oC (100kHz)。

關鍵字

CaCu3Ti4O12 ； 介電陶瓷 ； 反應燒結法

並列摘要

In this paper, phase formation, microstructure and dielectric properties of Nb-doped CaCu3Ti4O12 (CCTO) dielectric ceramics by reaction- sintering process were investigated. Single phase CCTO could be obtained after 2h sintering. A maximum density 4.9 g/cm3 and a maximum shrinkage 16.72% were found for CaCu3Ti4O12 ceramics sintered at 1120oC/4h. εr=7450 (30oC,100kHz), tanδ=0.1 (30oC,100kHz) and τε=0.17 %/oC (100kHz) were found for 1120oC/6h sintering CCTO. Single phase CaCu3Ti4-xNbxO12+x/2 ceramics were also obtained. A density 4.9g/cm3 and a shrinkage 17.36% were found at x=0.15 for 1130oC/6h sintering . εr=8695 (30oC,100kHz) were found at x=0.15 for 1130oC/6h sintering . tanδ=0.016 (30oC,100kHz) were found at x=0.02 for 1110oC/2h sintering . τε=0.02 %/oC (100kHz) were found at x=0.02 for 1110oC/6h sintering .

並列關鍵字

CaCu3Ti4O12 ； dielectric ceramics ； reaction- sintering process

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