以塗佈法製作銅鎵硫硒（CGSS）光伏電池材料之特性研究

本實驗利用球磨法製備次微米銅鎵硫硒（CuGaSeS，CGSS）漿料，以塗佈法將CGSS漿料塗佈於鈉玻璃基板上形成CGSS前驅層，再置於RTP爐管中進行高溫快速退火製程，使之形成具黃銅礦（Chalcopyrite）結構特性之薄膜；本實驗的高溫快速退火製程是在不通入硒蒸氣與與硒化氫氣體的前提下，利用高溫擴散使CGSS形成黃銅礦結構並分析其特性。本實驗所製作之前驅層為Cu-Se化合物顆粒與Ga-S化合物顆粒之薄膜；從實驗過程中可發現CGSS晶粒尺寸會隨著熱處理溫度（400 ~ 650℃）的升高而成長，在500℃之後開始出現CGSS（112）特徵面；CGSS在高溫與長時間熱處理下會出現Cu-O與Cu-S化合物，Cu-S通常出現在CGSS晶粒表面與晶界，而Cu-O應為RTP腔體內中殘留的O2與CGSS薄膜反應所生成。由本實驗可得知，CGSS的熱處理時間不需要太長，並且可在不通入硒氣體的條件下於熱處理溫度650℃、持溫10分鐘形成具黃銅礦結構之CGSS薄膜。

關鍵字

銅鎵硫硒；塗佈法；太陽電池；球磨；次微米漿料；非真空

並列摘要

This experiment was prepared using ball milling of copper gallium selenium sulfur (CuGaSeS, CGSS) sub-micron ink, to deposit thin layers of CGSS particles on sodium glass substrates using simple non-vacuum techniques, than put it in RTA tube to proceed Rapid Thermal Processing(RTP), and form Chalcopyrite thin film; This experiment process is without Se vapor and H2Se, the CGSS precursors diffusion of high temperature forms Chalcopyrite structure and to analyses its characteristics. The precursor layer is Cu-Se compound particles and Ga-S compound particles mixture; We discover that the grain size increases as temperature increases, the thin films have CGSS (112) preferred orientation when the themperature at 500oC; however, the thin films appear such oxides as Cu-O compound and Cu-S compound under thermal treatment of high temperature and long time, Cu-S compound usually found in CGSS surface and grain boundary, this remaining oxygen reacts with thin films in RTA tube. The RTP time of CGSS thin film is not need too long, we receive a result that thermal treatment of 650oC/10 min is the best parameter under environment of without Se vapor and H2Se.