非晶態氧化銦系列薄膜電晶體特性之研究

A Study on Characteristics of Amorphous InO-based Thin Film Transistors

李岳府(Yueh-Fu Lee)

指導教授 ： 姬梁文

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2014年)

摘要

透明寬能隙的氧化物與非晶的氧化物半導體元件在新世代的元件製備上非常具有潛力。本論文主要研究非晶型態的氧化銦鎵鋅薄膜電晶體(TFT)之光電元件製備與特性分析。其主要研究可分三個部分：
第一部分(材料分析)，我們研究非晶氧化銦鎵鋅薄膜光學特性與電特性。利用射頻磁控濺鍍(Radio Frequency magnetron sputtering, RF-sputtering)系統沉積通道層，研究薄膜在不同退火環境下、不同通道層厚度下與不同退火溫度下觀察薄膜的特性。藉由場發射掃描式顯微鏡(FE-SEM)、X-射線繞射光譜儀(XRD)、UV光譜分析儀、能量散射光譜儀(EDS)等儀器來觀察薄膜的表面型態以及光學晶體結構，在本實驗中氧化銦鎵鋅薄膜皆為非晶狀態。
第二部分(電晶體之特性)利用射頻磁控濺鍍系統沉積氧化銦鎵鋅薄膜於玻璃基板當通道層製作於下閘極結構電晶體。為了得到最佳特性，我們將探討不同通道比例下、不同退火環境下、不同通道層厚度下以及不同退火溫度下的薄膜元件特性，並使用高介電常數二氧化鉿作為介電層。在將元件進行輸出和轉移特性量測與分析。為了比較下閘極的結構特性，我們另外製備了上閘極結構。
第三部分(光線照射時電晶體之特性)利用氙燈(TRAIX 180)當作燈源照射，分別量測上下閘極薄膜電晶體對不同的照射時間下、不同的波段照射下，觀察薄膜電晶體的電特性，發現上閘極的穩定性比下閘極要來的好。

關鍵字

氧化銦鎵鋅 ； 薄膜電晶體 ； 非晶半導體 ； 電特性 ； 射頻磁控系統

並列摘要

Oxide semiconductor device wide bandgap transparent amorphous oxide component in the preparation of the new generation of great potentials. In this thesis, patterns of amorphous indium gallium zinc oxide thin-film transistor (TFT) Preparation and characterization of optoelectronic components analysis. The main study can be divided into three parts:
The first part (material analysis), we studied amorphous indium gallium zinc oxide thin film optical properties and electrical characteristics. By RF magnetron sputtering (Radio Frequency magnetron sputtering, RF-sputtering) channel layer deposition system, study film at different annealing environment, under different channel layer thickness at different annealing temperatures observed properties of the films. By field emission scanning electron microscope (FE-SEM), X-ray diffraction spectroscopy (XRD), UV spectrometer, energy dispersive spectroscopy (EDS) and other equipment to observe the surface morphology and optical crystal structure of the film, in the experiment, indium gallium zinc oxide film are amorphous.
The second part (the electrical characteristics of transistors) by RF magnetron sputtering system indium gallium zinc oxide thin films deposited on glass substrate produced when the channel layer under the gate structure transistor. To get the best features, we will explore different channel proportional, under different annealing environment, thin film element characteristics under different channel layer thickness and different annealing temperatures, and the use of high dielectric constant hafnium dioxide as dielectric layer. In the component output and transfer characteristics measurement and analysis. To compare the structural characteristics of the next gate, we additionally prepared on the gate structure.
The third part (transistor characteristics when exposed to light) the use of a xenon lamp (TRAIX 180) as a light source irradiation, respectively, measured from top to bottom gate TFTs under different irradiation time, irradiation under different bands observed TFTs electrical characteristics found on the gate electrode stability better than to come under the gate.

並列關鍵字

Indium gallium zinc oxide ； Thin film transistors ； Amorphous semiconductors ； Electrical characteristics ； RF magnetron system

參考文獻

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