電子束蒸鍍製程參數對ITO透明導電膜之光電特性研究

Fabrication and characterization of Indium Tin Oxide transparent conductive films by Electron-Beam Evaporation.

黃孟書(Meng-Shu Huang)

國立虎尾科技大學/電機資訊學院/光電與材料科技研究所/碩士(2007年)

摘要

中文摘要
氧化銦錫(Indium Tin Oxide, ITO)最目前廣泛使用的透明導電材料。由於其導電性佳、在可見光區域的穿透率高、在紫外光區具有高吸收等特性。同時在化學上的性質穩定性佳，隨著光電產業的快速成長，被相當廣泛的應用著。
本論文探討以電子束蒸發法將ITO鍍於玻璃試片上沉積透明導電膜。在製程中分別調整及控制氧流量、製程基板溫度、膜層厚度以求較佳參數，同時調整改變電子束的加速電壓，來探討各種參數變化對ITO透明導電膜之電性及光性的影響。
本論文對各參數對薄膜品質之影響做一系統性之探討。本論文之研究，在適當的參數控制下，在波長470nm的穿透率均在95%以上，片電阻值在9.8(Ω/□)以下。

並列摘要

Abstract
ITO is the most popular material for transparent electrical conduction film of commercial applications. There are several applications based on its excellent properties such as good conductivity, high transmittance rate for visible light, high absorbability for ultraviolet region and good chemical stability.
This thesis studies the e-beam vaporized ITO thin film on glass substrate. The optical and electrical properties were studies with several process parameters such as the flow rate of oxygen, growth temperature, e-beam accelerated voltage.
Systematic studies for the ITO related process parameters in the e-beam technology were well done in this thesis. With well controlled ITO film with process parameters optimized in the thesis, sheet resistance as low as 9.8(Ω/□) and high transparency as 95% with wavelength 470nm can both be achieved.

參考文獻

Status Review “,Thin Solid Films, (1983)P1-P102.

23. Bellingham et al,J.mater.Sci.Lett.11(1992)P263.

26.M.Quaas,C,Egs,H.walff,”structural studies of ITO thin films with the Rietveld method,”Thin solid Film,332(1998)P277-P281

27.Y,Shigesato,S.TaKaKi,and T,Haranoh,Elestrical and structural Propertier of low resistivity .Tin-doped indium Oxide films”, J.Appl Phys,71, (1922)3356

28.K.LChopra.S.major and D.K.Pandya.Thin Solid Films (1983) P102